MMBV109LT1 ,Silicon Epicap DiodesELECTRICAL CHARACTERISTICS (T = 25°C unless otherwiseACathode Anodenoted.)SOT–23Characteristic Symb ..
MMBV109LT1 ,Silicon Epicap DiodesON SemiconductorMMBV109LT1,Silicon Epicap DiodesMV209Designed for general frequency control and tu ..
MMBV2105L ,Silicon Tuning Diodes2MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209TYPICAL DEVICE CHARACTERISTICS1000T = 25 ..
MMBV2105LT1 ,Silicon Tuning DiodeMAXIMUM RATINGS1Rating Symbol Value UnitXXX M2Reverse Voltage V 30 VdcRTO–236AB, SOT–23CASE 318–08 ..
MMBV2107LT1 ,Silicon Tuning Diodes3Q, FIGURE OF MERIT NORMALIZED DIODE CAPACITANCEC , DIODE CAPACITANCE (pF)TQ, FIGURE OF MERITI , RE ..
MMBV2108LT1 ,Silicon Tuning DiodesELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)APreferred devices are recommended choi ..
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MP2363DN , 3A, 27V, 365KHz Step-Down Converter
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MP240D2 , THE GLOBAL EXPERT IN SOLID STATE RELAY TECHNOLOGY
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MMBV109LT1-MV209
Silicon Epicap Diodes
Silicon Epicap Diodes
Designed for general frequency control and tuning applications;
providing solid–state reliability in replacement of mechanical tuning
methods. High Q with Guaranteed Minimum Values at VHF Frequencies Controlled and Uniform Tuning Ratio Available in Surface Mount Package
MAXIMUM RATINGS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwisenoted.) CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 25 Vdc.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.Cathode
Anode
Cathode
Anode
SOT–23
TO–92
