MMBTH11 ,NPN RF Transistorapplications with high output levels fordriving FET mixers. Sourced from Process 47.Absolute Maxim ..
MMBTH11 ,NPN RF Transistorapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
MMBTH34 ,Process 47 NPN RF-IF AMP
MMBTH81LT1 ,UHF/VHF TransistorTHERMAL CHARACTERISTICSCharacteristic Symbol Max Unit(1)Total Device Dissipation FR-5 Board, P 225 ..
MMBTRA116SS , PNP Silicon Epitaxial Planar Transistor
MMBTRA226S , PNP Silicon Epitaxial Planar Transistor
MP232EC , 3-V TO 5.5-V MULTICHANNEL RS-232 LINE DRIVER/RECEIVER WITH ±15-kV IEC ESD PROTECTION
MP232EI , 3-V TO 5.5-V MULTICHANNEL RS-232 LINE DRIVER/RECEIVER WITH ±15-kV IEC ESD PROTECTION
MP2363DN , 3A, 27V, 365KHz Step-Down Converter
MP2363DN , 3A, 27V, 365KHz Step-Down Converter
MP240D2 , THE GLOBAL EXPERT IN SOLID STATE RELAY TECHNOLOGY
MP240D4 , THE GLOBAL EXPERT IN SOLID STATE RELAY TECHNOLOGY
MMBTH11
NPN RF Transistor
MPSH11 / MMBTH11 MPSH11 MMBTH11 C E TO-92 C E B B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 μA to 10 mA range to 300 MHz, and low frequency drift common- base VHF oscillator applications with high output levels for driving FET mixers. Sourced from Process 47. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 25 V CEO V Collector-Base Voltage 30 V CBO V Emitter-Base Voltage 3.0 V EBO I Collector Current - Continuous 50 mA C Operating and Storage Junction Temperature Range -55 to +150 °C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units MPSH11 *MMBTH11 P Total Device Dissipation 350 225 mW D Derate above 25°C 2.8 1.8 mW/°C R Thermal Resistance, Junction to Case 125 C/W θ ° JC R Thermal Resistance, Junction to Ambient 357 556 °C/W θJA *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." MPSH11/MMBTH11, Rev. B 2002
