MMBTH10RG ,NPN RF TransistorMMBTH10RGMMBTH10RGNPN RF Transistor• This device is designed for use in low noise UHF/VHF amplifier ..
MMBTH10RG ,NPN RF TransistorMMBTH10RGMMBTH10RGNPN RF Transistor• This device is designed for use in low noise UHF/VHF amplifier ..
MMBTH10RG ,NPN RF Transistorapplications involving pulsed or low duty cycle operations.
MMBTH11 ,NPN RF Transistorapplications with high output levels fordriving FET mixers. Sourced from Process 47.Absolute Maxim ..
MMBTH11 ,NPN RF Transistorapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
MMBTH34 ,Process 47 NPN RF-IF AMP
MP232EC , 3-V TO 5.5-V MULTICHANNEL RS-232 LINE DRIVER/RECEIVER WITH ±15-kV IEC ESD PROTECTION
MP232EI , 3-V TO 5.5-V MULTICHANNEL RS-232 LINE DRIVER/RECEIVER WITH ±15-kV IEC ESD PROTECTION
MP2363DN , 3A, 27V, 365KHz Step-Down Converter
MP2363DN , 3A, 27V, 365KHz Step-Down Converter
MP240D2 , THE GLOBAL EXPERT IN SOLID STATE RELAY TECHNOLOGY
MP240D4 , THE GLOBAL EXPERT IN SOLID STATE RELAY TECHNOLOGY
MMBTH10RG
NPN RF Transistor
MMBTH10RG MMBTH10RG NPN RF Transistor • This device is designed for use in low noise UHF/VHF amplifiers, with C collector currents in the 100 μA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. E • Sourced from process 42. SOT-23 B Mark: 3E 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Emitter Voltage 40 V CEO Collector-Base Voltage 40 V V CBO Emitter-Base Voltage 4.0 V V EBO I Collector Current - Continuous 50 mA C , T Operating and Storage Junction Temperature Range -55 ~ 150 °C T J STG * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units Off Characteristics V Collector-Emitter Sustaining Voltage * I = 1.0 mA, I = 0 40 V (BR)CEO C B V Collector-Base Breakdown Voltage I = 10 μA, I = 0 40 V (BR)CBO C E V Emitter-Base Breakdown Voltage I = 1.0 μA, I = 0 4.0 V (BR)EBO E C I Collector Cutoff Current V = 30 V, I = 0 100 nA CBO CB E On Characteristics h DC Current Gain I = 1.0 mA, V = 6.0 V 50 120 V FE C CE V Collector-Emitter Saturation Voltage I = 10 mA, I = 5.0 mA 0.2 V CE(sat) C B Small Signal Characteristics f Current Gain - Bandwidth Product I = 2.0 mA, V = 10 V, 450 MHz T C CE f = 100 MHz C Collector-Base Capacitance V = 10 V, I = 0, f = 1.0 MHz 0.6 pF cb CB E = 5.0 mA, V = 10 V, 12 pS rb’Cc Collector Base Time Constant I C CB f = 79.8 MHz * Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0% Thermal Characteristics T =25°C unless otherwise noted a Symbol Parameter Max. Units P Total Device Dissipation 225 mW D Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient 556 °C/W R θJA *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." ©2004 Rev. A, April 2004
