MMBTH10LT1G ,VHF/UHF TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
MMBTH10RG ,NPN RF TransistorMMBTH10RGMMBTH10RGNPN RF Transistor• This device is designed for use in low noise UHF/VHF amplifier ..
MMBTH10RG ,NPN RF TransistorMMBTH10RGMMBTH10RGNPN RF Transistor• This device is designed for use in low noise UHF/VHF amplifier ..
MMBTH10RG ,NPN RF Transistorapplications involving pulsed or low duty cycle operations.
MMBTH11 ,NPN RF Transistorapplications with high output levels fordriving FET mixers. Sourced from Process 47.Absolute Maxim ..
MMBTH11 ,NPN RF Transistorapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
MP2-202S , Ultra-Fast-Recovery Rectifier Diode
MP2-202S , Ultra-Fast-Recovery Rectifier Diode
MP2-202S , Ultra-Fast-Recovery Rectifier Diode
MP232EC , 3-V TO 5.5-V MULTICHANNEL RS-232 LINE DRIVER/RECEIVER WITH ±15-kV IEC ESD PROTECTION
MP232EI , 3-V TO 5.5-V MULTICHANNEL RS-232 LINE DRIVER/RECEIVER WITH ±15-kV IEC ESD PROTECTION
MP2363DN , 3A, 27V, 365KHz Step-Down Converter
MMBTH10L-MMBTH10LT1
Small Signal VHF Mixer
MMBTH10LT1,
MMBTH10-4LT1
Preferred DevicesVHF/UHF Transistor
NPN Silicon Device Marking: 3EM
Device Marking:
Features Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
MAXIMUM RATINGS
THERMAL CHARACTERISTICS FR−5 = 1.0 x 0.75 x 0.062 in. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
