MMBT6427LT1G ,Small Signal Darlington3V , TOTAL WIDEBAND NOISE VOLTAGE (nV) e , NOISE VOLTAGE (nV)T nNF, NOISE FIGURE (dB) i , NOISE CUR ..
MMBT6427LT1G ,Small Signal DarlingtonELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
MMBT6428LT1 ,Amplifier Transistors(NPN Silicon)2MMBT6428LT1 MMBT6429LT1NOISE CHARACTERISTICS(V = 5.0 Vdc, T = 25°C)CE ANOISE VOLTAGE30 30BANDWIDTH ..
MMBT6429 ,NPN silicon amplifier transistor.MAXIMUM RATINGSRating r Symbol Value Unit 1Collector-Emitter Voltage cho 150 VdcCollector-Base Volt ..
MMBT6429 ,NPN silicon amplifier transistor.MAXIMUM RATINGS T ,Rating Symbol Value UnitCoiltmtor-Emitter Voltage VCEO so Vdc MMBT5086Collector- ..
MMBT6429 ,NPN silicon amplifier transistor.THERMAL CHARACTERISTICSCharacteristic Symbol Max UnitTtatal Device Dissipation FR-S Board,' PD 225 ..
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MMBT6427LT1-MMBT6427LT1G
Small Signal Darlington
Darlington Transistor
NPN Silicon
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
OFF CHARACTERISTICS FR–5 = 1.0 � 0.75 � 0.062 in. Alumina = 0.4 � 0.3 � 0.024 in. 99.5% alumina.
COLLECTOR 3
BASE
EMITTER 2
