MMBT5550LT1G ,High Voltage TransistorsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
MMBT5551 ,Bipolar TransistorsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitTtatal Device Dissipation FR-S Board,' PD 225 ..
MMBT5551L ,Small Signal NPNMAXIMUM RATINGSRating Symbol 5550 5551 Unit1BASECollector−Emitter Voltage V 140 160 VdcCEOCollector ..
MMBT5551LT1 ,Small Signal NPNELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
MMBT5551LT1G ,Small Signal NPNMaximum ratings applied to the device are individual stress limit values (notnormal operating condi ..
MMBT5770 ,NPN RF Transistor
MP1230ABN , CMOS Microprocessor Compatible Double-Buffered 12-Bit Digital-to-Analog Converter
MP1230ABN , CMOS Microprocessor Compatible Double-Buffered 12-Bit Digital-to-Analog Converter
MP1231ABN , CMOS Microprocessor Compatible Double-Buffered 12-Bit Digital-to-Analog Converter
MP1231ABN. , CMOS Microprocessor Compatible Double-Buffered 12-Bit Digital-to-Analog Converter
MP1410 , The Compaq projector designed to fit any budget
MP1410 , The Compaq projector designed to fit any budget
MMBT5550LT1G
High Voltage Transistors
MMBT5550LT1,
MMBT5551LT1
MMBT5551LT1 is a Preferred DeviceHigh Voltage T ransistors
NPN Silicon
Features Pb−Free Packages are Available
MAXIMUM RATINGSMaximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS FR−5 = 1.0 � 0.75 � 0.062 in. Alumina = 0.4 � 0.3 � 0.024 in. 99.5% alumina.
