MMBT5401LT1G ,High Voltage Transistor(PNP Silicon)THERMAL CHARACTERISTICSCharacteristic Symbol Max Unit2L MSOT−23 (TO−236)Total Device Dissipation P ..
MMBT5401LT3G ,High Voltage Transistor(PNP Silicon)3V , COLLECTOR-EMITTER VOLTAGE (VOLTS) h , CURRENT GAINCEFEI , COLLECTOR CURRENT (A) μCMMBT54 ..
MMBT5550 ,NPN Epitaxial Silicon Transistor
MMBT5550 ,NPN Epitaxial Silicon TransistorTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitTotal Device Dissipation FR-6 Board,* PD 225 m ..
MMBT5550 ,NPN Epitaxial Silicon Transistor
MMBT5550 ,NPN Epitaxial Silicon Transistor
MP1230ABN , CMOS Microprocessor Compatible Double-Buffered 12-Bit Digital-to-Analog Converter
MP1230ABN , CMOS Microprocessor Compatible Double-Buffered 12-Bit Digital-to-Analog Converter
MP1231ABN , CMOS Microprocessor Compatible Double-Buffered 12-Bit Digital-to-Analog Converter
MP1231ABN. , CMOS Microprocessor Compatible Double-Buffered 12-Bit Digital-to-Analog Converter
MP1410 , The Compaq projector designed to fit any budget
MP1410 , The Compaq projector designed to fit any budget
MMBT5401LT1G-MMBT5401LT3G
High Voltage Transistor(PNP Silicon)
MMBT5401LT1
Preferred Device High Voltage T ransistor
PNP Silicon
Features Pb−Free Packages are Available
MAXIMUM RATINGSMaximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS FR−5 = 1.0 � 0.75 � 0.062 in. Alumina = 0.4 � 0.3 � 0.024 in 99.5% alumina.
