MMBT5401L ,Small Signal High VoltageELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
MMBT5401LT1 ,High Voltage TransistorTHERMAL CHARACTERISTICSCharacteristic Symbol Max Unit2L MSOT−23 (TO−236)Total Device Dissipation P ..
MMBT5401LT1G ,High Voltage Transistor(PNP Silicon)THERMAL CHARACTERISTICSCharacteristic Symbol Max Unit2L MSOT−23 (TO−236)Total Device Dissipation P ..
MMBT5401LT3G ,High Voltage Transistor(PNP Silicon)3V , COLLECTOR-EMITTER VOLTAGE (VOLTS) h , CURRENT GAINCEFEI , COLLECTOR CURRENT (A) μCMMBT54 ..
MMBT5550 ,NPN Epitaxial Silicon Transistor
MMBT5550 ,NPN Epitaxial Silicon TransistorTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitTotal Device Dissipation FR-6 Board,* PD 225 m ..
MP1230ABN , CMOS Microprocessor Compatible Double-Buffered 12-Bit Digital-to-Analog Converter
MP1230ABN , CMOS Microprocessor Compatible Double-Buffered 12-Bit Digital-to-Analog Converter
MP1231ABN , CMOS Microprocessor Compatible Double-Buffered 12-Bit Digital-to-Analog Converter
MP1231ABN. , CMOS Microprocessor Compatible Double-Buffered 12-Bit Digital-to-Analog Converter
MP1410 , The Compaq projector designed to fit any budget
MP1410 , The Compaq projector designed to fit any budget
MMBT5401L-MMBT5401LT1
Small Signal High Voltage
MMBT5401LT1
Preferred Device High Voltage T ransistor
PNP Silicon
Features Pb−Free Packages are Available
MAXIMUM RATINGSMaximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS FR−5 = 1.0 � 0.75 � 0.062 in. Alumina = 0.4 � 0.3 � 0.024 in 99.5% alumina.
