MMBT2222A ,Small Signal Transistor (NPN)MMBT2222A®SMALL SIGNAL NPN TRANSISTORPRELIMINARY DATAType MarkingMMBT2222A M22■ SILICON EPITAXIAL P ..
MMBT2222AG-AE3-R , NPN GENERAL PURPOSE AMPLIFIER
MMBT2222AL ,Small Signal GP NPNMaximum ratings applied to the device are individual stress limit values (notMMBT2222ALT3 SOT−23 10 ..
MMBT2222ALT1 ,General Purpose Transistors(NPN Silicon)THERMAL CHARACTERISTICSxxx = Specific Device CodeCharacteristic Symbol Max Unit= (M1B = MMBT2222LT1 ..
MMBT2222ALT1G ,General Purpose TransistorsTHERMAL CHARACTERISTICSxxx = Specific Device CodeCharacteristic Symbol Max Unit= (M1B = MMBT2222LT1 ..
MMBT2222ALT1G-- ,General Purpose TransistorsMAXIMUM RATINGSBASERating Symbol Value Unit2Collector−Emitter Voltage V VdcCEO30 EMITTERMMBT2222LT1 ..
MOC70P3 ,PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCHMOC70P1 / MOC70P2 / MOC70P3PHOTOTRANSISTOR OPTICALINTERRUPTER SWITCHPACKAGE DIMENSIONSDESCRIPTION 0 ..
MOC8020 ,6-Pin DIP Optoisolators Darlington Ouput(No Base Connection)**Order this documentSEMICONDUCTOR TECHNICAL DATA by MOC8020/D*GlobalOptoisolator[CTR = 500% Min]* ..
MOC8020300 ,6-Pin DIP Photodarlington Output OptocouplerAPPLICATIONS MIN0.100 (2.54)ANODE 1 6 N/C Appliances, measuring instruments0.016 (0.40)0.008 (0.20 ..
MOC8020300W ,6-Pin DIP Photodarlington Output OptocouplerPHOTODARLINGTON OPTOCOUPLERS (NO BASE CONNECTION)MOC8020 MOC8021DESCRIPTIONPACKAGE DIMENSIONSThe M ..
MOC80203S ,6-Pin DIP Photodarlington Output OptocouplerFEATURES• High current transfer ratio 6-500% (MOC8020) 0.350 (8.89)0.330 (8.38)-1000% (MOC8021)0.07 ..
MOC80203SD ,6-Pin DIP Photodarlington Output OptocouplerAPPLICATIONS MIN0.100 (2.54)ANODE 1 6 N/C Appliances, measuring instruments0.016 (0.40)0.008 (0.20 ..
MMBT2222A
Small Signal Transistor (NPN)
MMBT2222ASMALL SIGNAL NPN TRANSISTOR
PRELIMINARY DATA SILICON EPITAXIAL PLANAR NPN
TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE
FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS
MMBT2907A
APPLICATIONS WELL SUITABLE FOR PORTABLE
EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH
HIGH GAIN AND LOW SATURATION
VOLTAGE
February 2003
ABSOLUTE MAXIMUM RATINGS1/5
THERMAL DATA• Device mounted on a PCB area of 1 cm2 .
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300 μs, duty cycle ≤ 2 %
MMBT2222A2/5
ELECTRICAL CHARACTERISTICS (Continued)∗ Pulsed: Pulse duration = 300 μs, duty cycle ≤ 2 %
MMBT2222A3/5
MMBT2222A4/5
. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://
MMBT2222A5/5
:
www.ic-phoenix.com
.
