MMBT2131 ,Bipolar Junction TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Unit ..
MMBT2131T1 ,Bipolar Junction Transistor2h , DC CURRENT GAIN V , COLLECTOR-EMITTER VOLTAGE (V)CE(sat)FEV , COLLECTOR-EMITTER VOLTAGE (V)VOL ..
MMBT2131T1G , General Purpose Transistors
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MOC70P3 ,PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCHMOC70P1 / MOC70P2 / MOC70P3PHOTOTRANSISTOR OPTICALINTERRUPTER SWITCHPACKAGE DIMENSIONSDESCRIPTION 0 ..
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MOC8020300 ,6-Pin DIP Photodarlington Output OptocouplerAPPLICATIONS MIN0.100 (2.54)ANODE 1 6 N/C Appliances, measuring instruments0.016 (0.40)0.008 (0.20 ..
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MMBT2131-MMBT2131T1
Bipolar Junction Transistor
MMBT2131T1
General Purpose
Transistors
PNP Bipolar Junction Transistor
(Complementary NPN Device: MMBT2132T1/T3)
NOTE: Voltage and Current are negative for the PNP Transistor.
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected. Minimum FR−4 or G−10 PCB, Operating to Steady State. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided),
Operating to Steady State.
