MRF957T1 ,NPN Silicon Low Noise, High-Frequency Transistorsfeatures excellent broadband linearity and is offered in a variety of packages.• Fully Implanted Ba ..
MRF9745T1 ,HIGH FREQUENCY POWER TRANSISTOR LDMOS FET**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF9745T1/D* **The RF Small Signal Line* * N–Ch ..
MRF9811T1 ,HIGH FREQUENCY GaAs FET TRANSISTOR**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF9811T1/D* **The RF Small Signal Line* **N–Ch ..
MRFE6S9125NBR1 , N-Channel Enhancement-Mode Lateral MOSFETs
MRFE6S9200HR3 , RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRFE6S9200HR3 , RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MT3S03AFS , VHF~UHF Band Low-Noise Amplifier Applications
MT3S03AT ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSMT3SO3ATTOSHIBA TRANSISTOR SILICON NPN EPlTAXIAL PLANAR TVHF-UHF BAND LOW NOISE AMPLIFIER APPLICATI ..
MT3S04AFS , VHF~UHF Band Low-Noise Amplifier Applications
MT3S04AT ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSAPPLICATIONS Unit in mmL05l , 1.2:0.05 IPhhmhh C Shir.C ShirI .Ft-c StSCh I = -flMAXIMUM RATINGS (T ..
MT3S05T ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSApplications Unit: mm Sutable for use in an OSC Low noise figure NF = 1.4dB Excellent co ..
MT3S06S ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSAPPLICATIONS Unit in mmT .nw Nni m: Fi m1 ret0'=1%dTt1.6:02Whm=3V,In=3mA,f= 2GHz)0.8:.t0.1F—T—fl ~3| ..
MMBR951LT1-MRF9511LT1-MRF957T1
NPN Silicon Low Noise, High-Frequency Transistors
The RF Line-! #% !!" !
Designed for use in high gain, low noise small–signal amplifiers. This series
features excellent broadband linearity and is offered in a variety of packages. Fully Implanted Base and Emitter Structure 18 Finger, 1.25 Micron Geometry with Gold Top Metal Gold Sintered Back Metal Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
Order this document
by MMBR951ALT1/D-
SEMICONDUCTOR TECHNICAL DATA
