MMBR571LT1 ,NPN Silicon High-Frequency TransistorsTHERMAL CHARACTERISTICSRating Symbol Max UnitThermal Resistance, Junction to Case R 225 °C/WθJCMRF5 ..
MMBR901LT1 ,NPN Silicon High-Frequency Transistor**Order this documentSEMICONDUCTOR TECHNICAL DATAby MMBR901LT1/DThe RF Line * **!" * Designed prim ..
MMBR911LT1 ,General Purpose Small SignalMAXIMUM RATINGSRating Symbol Value UnitCollector–Emitter Voltage V 12 VdcCEOCollector–Base Voltage ..
MMBR911LT1 ,General Purpose Small Signal**Order this documentSEMICONDUCTOR TECHNICAL DATAby MMBR911LT1/DThe RF Line * *Designed for low no ..
MMBR920 ,NPN SILICON HIGH FREQUENCY TRANSISTOR
MMBR931LT1 , The RF Line NPN Silicon High Frequency Transistor
MOC3083 ,6V; 50mA optically coupled bilateral switchMAXIMUM RATINGS2 5Rating Symbol Value UnitZERO3 CROSSING 4INPUT LEDCIRCUITReverse Voltage V 6 Volts ..
MOC3083M ,6-Pin DIP 800V Zero Crossing Triac Driver Output OptocouplerAPPLICATIONS • Solenoid/valve controls• Lighting controls• Static power switches•AC motor drives•Te ..
MOC3083-M ,6-Pin DIP Zero-Cross Optoisolators Triac Driver Output (800 Volts Peak)Applications:• Solenoid/Valve Controls • Temperature ControlsCOUPLER SCHEMATIC• Lighting Controls • ..
MOC3162VM ,6-Pin 600V Zero Crossing Triac Driver Output OptocouplerAPPLICATIONS • Solenoid/valve controls• Static power switches•Temperature controls•AC motor starter ..
MOC3163 ,6-PIN DIP ZERO-CROSS PHOTOTRIAC DRIVER OPTOCOUPLER (600V PEAK)FEATURES• Simplifies logic control of 115/240 VAC power• Zero voltage crossing• dv/dt of 1000 V/µs g ..
MOC3163TVM ,6-Pin 600V Zero Crossing Triac Driver Output Optocoupler 6-PIN DIP ZERO-CROSSPHOTOTRIAC DRIVER OPTOCOUPLER(600V PEAK)MOC3061-M MOC3062-M MOC3063 ..
MMBR571LT1-MRF571-MRF5711LT1
NPN Silicon High-Frequency Transistors
The RF Line--
Designed for low noise, wide dynamic range front–end amplifiers and
low–noise VCO’s. Available in a surface–mountable plastic packages. This
Motorola series of small–signal plastic transistors offers superior quality and
performance at low cost. High Gain–Bandwidth Product
fT = 8.0 GHz (Typ) @ 50 mA Low Noise Figure
NFmin = 1.6 dB (Typ) @ f = 1.0 GHz (MRF5711LT1, MRF571) High Gain
GNF = 17 dB (Typ) @ 30 mA/500 MHz (MMBR571LT1) High Power Gain
Gpe (matched) = 13.5 dB (Typ) (MRF5711LT1) State–of–the–Art Technology
Fine Line Geometry
Ion–Implanted Arsenic Emitters
Gold Top Metallization and Wires
Silicon Nitride Passivation Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKINGNOTE: Case temperature measured on collector lead immediately adjacent to body of package.
Order this document
by MMBR571LT1/D-
SEMICONDUCTOR TECHNICAL DATA
