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MMBR571 ,NPN silicon high frequency transistor.NOTnmwurvry’ié' -OROLA SC{XSTRS/R FI6367254 MOTOROLA SC (XSTRSIR F)MOTOROLAI SEMICONDUCTORTECHNICAL ..
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MMBR521LT1-MRF5211LT1
HIGH-FREQUENCY TRANSISTOR PNP SILICON
The RF Line--
Designed primarily for use in the high–gain, low–noise small–signal
amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast
switching times. High Current Gain–Bandwidth Product —
fT = 3.4 GHz (Typ) @ IC = –35 mAdc (MMBR521LT1)
fT = 4.2 GHz (Typ) @ IC = –50 mAdc (MRF5211LT1) Low Noise Figure @ f = 1.0 GHz —
NF(matched) = 2.5 dB (Typ) (MMBR521LT1)
NF(matched) = 2.8 dB (Typ) (MRF5211LT1) High Power Gain — Gpe (matched) = 11 dB (Typ) Guaranteed RF Parameters Surface Mounted SOT–23 (MMBR521LT1) & SOT–143 (MRF5211LT1)
Offer Improved RF Performance
Lower Package Parasitics
Higher Gain Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKINGNOTE: Case Temperature is measured on the collector lead closest to the package. For case
temperatures above +75°C: PDISP(max) = (TJmax – TC) / RθJC