MMBD1503 , High Conductance Low Leakage DiodeMMBD1501/A / 1503/A / 1504/A / 1505/ADiscrete POWER & SignalTechnologiesMMBD1501/A / 1503/A / 1504/ ..
MMBD1503 , High Conductance Low Leakage Diodeapplications involving pulsed or low duty cycle operationsThermal Characteristics TA = 25°C un ..
MMBD1503 , High Conductance Low Leakage Diode
MMBD1503A ,Small Signal Diodesapplications involving pulsed or low duty cycle operationsThermal Characteristics Symbol Paramet ..
MMBD1503A ,Small Signal DiodesMMBD1501/A / 1503/A / 1504/A / 1505/AMMBD1501/A / 1503/A / 1504/A / 1505/AConnection Diagrams33 315 ..
MMBD1504A ,Small Signal DiodesMMBD1501/A / 1503/A / 1504/A / 1505/AMMBD1501/A / 1503/A / 1504/A / 1505/AConnection Diagrams33 315 ..
MOC119 ,6-Pin DIP Optoisolator Darlington Output(No Base Connection)
MOC119 ,6-Pin DIP Optoisolator Darlington Output(No Base Connection)
MOC119 ,6-Pin DIP Optoisolator Darlington Output(No Base Connection)
MOC119 ,6-Pin DIP Optoisolator Darlington Output(No Base Connection)
MOC119SD ,6-Pin DIP Photodarlington Output OptocouplerAPPLICATIONS 0° to 15°TYP0.016 (0.41) Appliances, measuring instruments0.100 (2.54)CATHODE 2 5 COL ..
MOC205 ,SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT
MMBD1503
High Conductance Low Leakage Diode
MMBD1501/A / 1503/A / 1504/A / 1505/A Discrete POWER & Signal Technologies MMBD1501/A / 1503/A / 1504/A / 1505/A 3 CONNECTION DIAGRAMS 3 3 1501 1503 3 11 12 1 2 NC 1 2 3 3 1505 1504 2 MARKING MMBD1501 11 MMBD1501A A11 SOT-23 MMBD1503 13 MMBD1503A A13 1 MMBD1504 14 MMBD1504A A14 1 2 1 2 MMBD1505 15 MMBD1505A A15 High Conductance Low Leakage Diode Sourced from Process 1L. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units W Working Inverse Voltage 180 V IV I Average Rectified Current 200 mA O I DC Forward Current 600 mA F i Recurrent Peak Forward Current 700 mA f Peak Forward Surge Current i f(surge) Pulse width = 1.0 second 1.0 A Pulse width = 1.0 microsecond 2.0 A Storage Temperature Range -55 to +150 C T ° stg T Operating Junction Temperature 150 °C J *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units MMBD1501/A/ 1503-1505/A* P Total Device Dissipation 350 mW D Derate above 25°C 2.8 mW/°C R Thermal Resistance, Junction to Ambient 357 C/W θ ° JA *Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2 ã1997
