MMBD1501/A ,Small Signal DiodesMMBD1501/A / 1503/A / 1504/A / 1505/AMMBD1501/A / 1503/A / 1504/A / 1505/AConnection Diagrams33 315 ..
MMBD1501A ,Small Signal DiodesMMBD1501/A / 1503/A / 1504/A / 1505/AMMBD1501/A / 1503/A / 1504/A / 1505/AConnection Diagrams33 315 ..
MMBD1501A ,Small Signal Diodesapplications involving pulsed or low duty cycle operationsThermal Characteristics Symbol Paramet ..
MMBD1503 , High Conductance Low Leakage DiodeMMBD1501/A / 1503/A / 1504/A / 1505/ADiscrete POWER & SignalTechnologiesMMBD1501/A / 1503/A / 1504/ ..
MMBD1503 , High Conductance Low Leakage Diodeapplications involving pulsed or low duty cycle operationsThermal Characteristics TA = 25°C un ..
MMBD1503 , High Conductance Low Leakage Diode
MOC119 ,6-Pin DIP Optoisolator Darlington Output(No Base Connection)
MOC119 ,6-Pin DIP Optoisolator Darlington Output(No Base Connection)
MOC119 ,6-Pin DIP Optoisolator Darlington Output(No Base Connection)
MOC119 ,6-Pin DIP Optoisolator Darlington Output(No Base Connection)
MOC119SD ,6-Pin DIP Photodarlington Output OptocouplerAPPLICATIONS 0° to 15°TYP0.016 (0.41) Appliances, measuring instruments0.100 (2.54)CATHODE 2 5 COL ..
MOC205 ,SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT
MMBD1501/A-MMBD1501A
Small Signal Diodes
MMBD1501/A / 1503/A / 1504/A / 1505/A MMBD1501/A / 1503/A / 1504/A / 1505/A Connection Diagrams 3 3 3 1503 1501 3 11 1 2 11 2 2NC 2 3 3 1504 1505 MARKING 1 MMBD1501 11 MMBD1501A A11 MMBD1503 13 MMBD1503A A13 MMBD1504 14 MMBD1504A A14 SOT-23 1 2 1 2 MMBD1505 15 MMBD1505A A15 Small Signal Diodes Absolute Maximum Ratings* T = 25°C unless otherwise noted A Symbol Parameter Value Units V Maximum Repetitive Reverse Voltage 200 V RRM I Average Rectified Forward Current 200 mA F(AV) I Non-repetitive Peak Forward Surge Current FSM Pulse Width = 1.0 second 1.0 A Pulse Width = 1.0 microsecond 2.0 A Storage Temperature Range -55 to +150 C T ° stg Operating Junction Temperature 150 °C T J *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 350 mW D R Thermal Resistance, Junction to Ambient 357 °C/W θJA Electrical Characteristics T = 25°C unless otherwise noted A Symbol Parameter Test Conditions Min Max Units V Breakdown Voltage V R 200 I = 5.0 μA R V Forward Voltage I = 1.0 mA 620 720 mV F F I = 10 mA 720 830 mV F I = 50 mA 800 890 mV F I = 100 mA 830 930 mV F I = 200 mA 0.87 1.1 V F I = 300 mA 0.90 1.15 V F I Reverse Current V = 125 V 1.0 nA R R V = 125 V, T = 150°C 3.0 μA R A V = 180 V 10 nA R 5.0 V = 180 V, T = 150°C μA R A C Total Capacitance 4.0 PF T V = 0, f = 1.0 MHz R MMBD1500 series, Rev. B2 2001
