MMBD1404A ,High Voltage General Purpose DiodeMMBD1401A / 1403A / 1404A / 1405AMMBD1401A / 1403A / 1404A / 1405ACONNECTION DIAGRAMS3331401A1403 ..
MMBD1405 ,SURFACE MOUNT SWITCHING DIODESDiscrete POWER & SignalTechnologiesNMMBD1401 / 1403 / 1404 / 1405CONNECTION DIAGRAMS3331401 14033 ..
MMBD1405 ,SURFACE MOUNT SWITCHING DIODES
MMBD1405A ,High Voltage General Purpose DiodeMMBD1401A / 1403A / 1404A / 1405AMMBD1401A / 1403A / 1404A / 1405ACONNECTION DIAGRAMS3331401A1403 ..
MMBD1405A ,High Voltage General Purpose Diodeapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
MMBD1501 , High Conductance Low Leakage DiodeMMBD1501/A / 1503/A / 1504/A / 1505/ADiscrete POWER & SignalTechnologiesMMBD1501/A / 1503/A / 1504/ ..
MOC119 ,6-Pin DIP Optoisolator Darlington Output(No Base Connection)
MOC119 ,6-Pin DIP Optoisolator Darlington Output(No Base Connection)
MOC119 ,6-Pin DIP Optoisolator Darlington Output(No Base Connection)
MOC119 ,6-Pin DIP Optoisolator Darlington Output(No Base Connection)
MOC119SD ,6-Pin DIP Photodarlington Output OptocouplerAPPLICATIONS 0° to 15°TYP0.016 (0.41) Appliances, measuring instruments0.100 (2.54)CATHODE 2 5 COL ..
MOC205 ,SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT
MMBD1404A
High Voltage General Purpose Diode
MMBD1401A / 1403A / 1404A / 1405A MMBD1401A / 1403A / 1404A / 1405A CONNECTION DIAGRAMS 3 3 3 1401A 1403A 3 A29 2 NC 1 1 2 12 3 3 1404A 1405A 2 MARKING SOT-23 1 MMBD1401A A29 MMBD1404A A33 MMBD1403A A32 MMBD1405A A34 1 2 1 2 High Voltage General Purpose Diode Sourced from Process 2V. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units W Working Inverse Voltage 175 V IV I Average Rectified Current 200 mA O I DC Forward Current 600 mA F i Recurrent Peak Forward Current 700 mA f Peak Forward Surge Current i f(surge) Pulse width = 1.0 second 1.0 A Pulse width = 1.0 microsecond 2.0 A Storage Temperature Range -55 to +150 C T ° stg Operating Junction Temperature 150 °C T J *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units MMBD1401A-1405A* PD Total Device Dissipation 350 mW Derate above 25°C 2.8 mW/°C Thermal Resistance, Junction to Ambient 357 R °C/W θJA *Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2 MMBD1401A-1405A, Rev. A 1999
