MMBD1202 ,High Conductance Ultra Fast DiodeMMBD1201 / 1202 / 1203 / 1204 / 1205 — Small Signal DiodesAugust 2011MMBD1201 / 1202 / 1203 / 1204 ..
MMBD1203 ,Small Signal DiodesMMBD1201 / 1203 / 1204 / 1205MMBD1201 / 1203 / 1204 / 1205Connection Diagrams3 312033 120132411 2NC ..
MMBD1205 ,SURFACE MOUNT SWITCHING DIODES
MMBD1205 ,SURFACE MOUNT SWITCHING DIODES
MMBD1205 ,SURFACE MOUNT SWITCHING DIODES
MMBD1205 ,SURFACE MOUNT SWITCHING DIODES
MOC119 ,6-Pin DIP Optoisolator Darlington Output(No Base Connection)
MOC119 ,6-Pin DIP Optoisolator Darlington Output(No Base Connection)
MOC119 ,6-Pin DIP Optoisolator Darlington Output(No Base Connection)
MOC119 ,6-Pin DIP Optoisolator Darlington Output(No Base Connection)
MOC119SD ,6-Pin DIP Photodarlington Output OptocouplerAPPLICATIONS 0° to 15°TYP0.016 (0.41) Appliances, measuring instruments0.100 (2.54)CATHODE 2 5 COL ..
MOC205 ,SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT
MMBD1202
High Conductance Ultra Fast Diode
MMBD1201 / 1202 / 1203 / 1204 / 1205 — Small Signal Diodes August 2011 MMBD1201 / 1202 / 1203 / 1204 / 1205 Small Signal Diodes Connection Diagram 3 3 1202 1201 3 3 1 2NC 1NC 2 24 3 3 1203 1204 1 2 2 MARKING 1 1 2 1 2 MMBD1201 24 MMBD1202 25 MMBD1203 26 MMBD1204 27 3 1205 SOT-23 MMBD1205 28 1 2 Absolute Maximum Ratings* T = 25°C unless otherwise noted A Symbol Parameter Value Units V Maximum Repetitive Reverse Voltage 100 V RRM I Average Rectified Forward Current 200 mA F(AV) I Non-repetitive Peak Forward Surge Current FSM Pulse Width = 1.0 second 1.0 A Pulse Width = 1.0 microsecond 2.0 A T Storage Temperature Range -55 to +150 °C STG T Operating Junction Temperature 150 °C J *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics T = 25°C unless otherwise noted A Symbol Parameter Value Units P Power Dissipation 350 mW D R Thermal Resistance, Junction to Ambient 357 °C/W θJA © 2011 MMBD1201 / 1202 / 1203 / 1204 / 1205 Rev. C1 1
