MM74C86N ,Quad 2-Input EXCLUSIVE-OR GateElectrical Characteristics’’ provides conditions for actual deviceoperation.2e eACElectricalCharact ..
MM74C86N ,Quad 2-Input EXCLUSIVE-OR GateFeaturesYWide supply voltage range 3.0V to 15VEmploying complementary MOS (CMOS) transistors toYach ..
MM74C89J ,64-Bit TRI-STATE Random Access Read/Write MemoryFeaturesprovide for easy memory expansion.YWide supply voltage range 3.0V to 15VAddress Operation: ..
MM74C89N ,64-Bit 3-STATE Random Access Read/Write MemoryGeneral Descriptionwhich was written into the memory is non-destructivelyThe MM74C89 is a 16-word b ..
MM74C89N ,64-Bit 3-STATE Random Access Read/Write MemoryFeaturesmemory enable input. The four 3-STATE data output linesworking in conjunction with the memo ..
MM74C89N ,64-Bit 3-STATE Random Access Read/Write MemoryFeaturesprovide for easy memory expansion.YWide supply voltage range 3.0V to 15VAddress Operation: ..
MN34595 ,Image Sensors for Digital Still CamerasFeaturesy Type-1 / 2.33" 16.2 mega pixel CCD image sensory Image size : Type 1/2.33y Unit cell size ..
MN35502 ,For Video稟udiofeatures a built-in digital filter with 16/20-bit input.LRCK 2 27 RSBUPIt uses pulse edge modulatio ..
MN35503 ,For Video稟udioFeatures OUT1D 13 16 OUT2D2 Built-in 8-fold oversampling digital filter using I S bus AV 14 15 AVSS ..
MN3610 ,Image Pickup DevicesFeatures ø 4 19 øR 2A• 2048 floating photodiodes and n-channel buried type CCD shift ø 5 18 NC1Breg ..
MN3610H ,Image Pickup DevicesAbsolute Maximum Ratings (Ta=25˚C, V =0V)SSParameter Symbol Rating UnitVPower supply voltage DD – 0 ..
MN3611 ,Image Pickup DevicesFeatures ø 4 19 øR 2• 2160 floating photodiodes and n-channel buried type CCD shiftNC 5 18 NCregist ..
MM74C86N
Quad 2-Input EXCLUSIVE-OR Gate
TL/F/5887
MM54C86/MM74C86
Quad
2-Input
EXCLUSIVE-OR
Gate
February 1988
MM54C86/MM74C86 Quad 2-Input EXCLUSIVE-OR Gate
General Description
Employing complementary MOS (CMOS) transistorsto
achieve widepowersupply operating range,low power con-
sumptionand high noise margin these gates provide basic
functions usedinthe implementationof digital integrated
circuit systems. TheN-and P-channel enhancement mode
transistors providea symmetrical circuit with output swing
essentially equaltothe supply voltage.NoDC power other
than that causedby leakage currentis consumed during
static condition.All inputsare protected from damagedue static dischargeby diode clampsto VCCand GND.
Features Wide supply voltage range 3.0Vto 15V Guaranteed noise margin 1.0V High noise immunity 0.45 VCC (typ.) Low power Fanoutof2
TTL compatibility driving74L Low power consumption 10 nW/package (typ.) The MM54C86/MM74C86 followsthe
MM54LS86/MM74LS86 Pinout
Connection Diagram
Dual-In-Line Package
TL/F/5887–1
Top View
OrderNumber MM54C86orMM74C86
Truth Table
Inputs Output Y L H H LeHigh LevelLe LowLevel
C1995National SemiconductorCorporation RRD-B30M105/PrintedinU.S.A.
