MJL21193 ,16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typical Max ..
MJL21193 ,16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTSOrder this document**by MJL21193/DSEMICONDUCTOR TECHNICAL DATA** ** ** **The MJL21193 and MJL21194 ..
MJL21194 ,16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typical Max ..
MJL3281 ,15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTSTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.7 °C/ ..
MJL3281A ,15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTSOrder this document**by MJL3281A/DSEMICONDUCTOR TECHNICAL DATA* * ** **" **Motorola Preferred Dev ..
MJL4281A ,350V Audio Transistor, NPNELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
MM74HC373MTC ,3-STATE Octal D-Type LatchElectrical Characteristics V = 5V, T = 25°C, t = t = 6 nsCC A r f GuaranteedSymbol Parameter Condit ..
MM74HC373MTCX ,3-STATE Octal D-Type LatchFeaturessuited for interfacing with bus lines in a bus organized sys-tem. Typical propagation delay ..
MM74HC373MTCX ,3-STATE Octal D-Type LatchFeaturessuited for interfacing with bus lines in a bus organized sys-tem. Typical propagation delay ..
MM74HC373MTCX ,3-STATE Octal D-Type LatchGeneral Descriptionstorage elements.The MM74HC373 high speed octal D-type latches utilizeThe 74HC l ..
MM74HC373MTCX ,3-STATE Octal D-Type LatchMM74HC373 3-STATE Octal D-Type LatchSeptember 1983Revised February 1999MM74HC3733-STATE Octal D-Typ ..
MM74HC373N ,3-STATE Octal D-Type LatchMM74HC373 3-STATE Octal D-Type LatchSeptember 1983Revised February 1999MM74HC3733-STATE Octal D-Typ ..
MJL21193
16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS
Silicon Power T ransistors
The MJL21193 and MJL21194 utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications. Total Harmonic Distortion Characterized High DC Current Gain –
hFE = 25 Min @ IC
= 8 Adc Excellent Gain Linearity High SOA: 2.25 A, 80 V, 1 Second
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
OFF CHARACTERISTICS(1) Pulse Test: Pulse Width = 5.0 μs, Duty Cycle ≤10%. (continued)
*ON Semiconductor Preferred Device
