MJE8503 ,POWER TRANSISTORS 5.0 AMPERES 1500 VOLTSOrder this document**by MJE8503A/DSEMICONDUCTOR TECHNICAL DATA* Motorola Preferred Device* NPN Bi ..
MJE9780 ,PNP SILICON POWER TRANSISTOR 3.0 AMPERES 150 VOLTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristics Symbol Min Typ Max Uni ..
MJE9780 ,PNP SILICON POWER TRANSISTOR 3.0 AMPERES 150 VOLTSMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol MJE9780 UnitCollector–Emitter Susta ..
MJF122 ,COMPLEMENTARY SILICON POWER DARLINGTONSELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
MJF122G , COMPLEMENTARY SILICON POWER DARLINGTONS 5.0 A, 100 V, 30 W
MJF127 ,COMPLEMENTARY SILICON POWER DARLINGTONS2t, TIME μ (s)MJF122 MJF127T TA C804603TC2 40T20 A100 20 40 60 80 100 120 140 160T, TEMPERATURE ( ..
MM74HC27N ,Triple 3-Input NOR GateMM54HC27/MM74HC27Triple3-InputNORGateJanuary1988MM54HC27/MM74HC27Triple3-InputNORGateGeneralDescrip ..
MM74HC27N ,Triple 3-Input NOR GateMM54HC27/MM74HC27Triple3-InputNORGateJanuary1988MM54HC27/MM74HC27Triple3-InputNORGateGeneralDescrip ..
MM74HC280N ,9-Bit Odd/Even Parity Generator/CheckerMM54HC280/MM74HC2809-BitOdd/EvenParityGenerator/CheckerJanuary1988MM54HC280/MM74HC2809-BitOdd/EvenP ..
MM74HC299N ,8-Bit TRI-STATE Universal Shift RegisterMM54HC299/MM74HC2998-BitTRI-STATEUniversalShiftRegisterJanuary1988MM54HC299/MM74HC2998-BitTRI-STATE ..
MM74HC30N ,8-Input NAND GateMM54HC30/MM74HC308-InputNANDGateJanuary1988MM54HC30/MM74HC308-InputNANDGateGeneralDescription
MM74HC32M ,Quad 2-Input OR GateMM74HC32 Quad 2-Input OR GateSeptember 1983Revised January 2005MM74HC32Quad 2-Input OR Gate
MJE8503
POWER TRANSISTORS 5.0 AMPERES 1500 VOLTS
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NPN Bipolar Power TransistorThe MJE8503A transistor is designed for high voltage, high speed, power switching
in inductive circuits where fall time is critical. They are suited for line operated
switchmode applications such as: Switching Regulators Inverters Solenoid and Relay Drivers Motor Controls Deflection Circuits
Featuring 1500 Volt Collector-Base Breakdown Capability Fast Switching:
180 ns Typical Fall Times
450 ns Typical Crossover Times
1.2 μs Typical Storage Times Low Collector-Emitter Leakage Current — 100 μA Max @ 1500 VCES
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
THERMAL CHARACTERISTICS(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%.
SWITCHMODE is a trademark of Motorola Inc.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
*Motorola Preferred Device
