MJE803STU ,NPN Epitaxial Silicon Darlington TransistorMJE800/801/802/803MJE800/801/802/803Monolithic Construction With Built-in Base-Emitter Resistors H ..
MJE8500 , Silicon NPN Power Transistor
MJE8503 ,POWER TRANSISTORS 5.0 AMPERES 1500 VOLTSOrder this document**by MJE8503A/DSEMICONDUCTOR TECHNICAL DATA* Motorola Preferred Device* NPN Bi ..
MJE9780 ,PNP SILICON POWER TRANSISTOR 3.0 AMPERES 150 VOLTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristics Symbol Min Typ Max Uni ..
MJE9780 ,PNP SILICON POWER TRANSISTOR 3.0 AMPERES 150 VOLTSMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol MJE9780 UnitCollector–Emitter Susta ..
MJF122 ,COMPLEMENTARY SILICON POWER DARLINGTONSELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
MM74HC273WMX ,Octal D-Type Flip-Flop with ClearMM74HC273 Octal D-Type Flip-Flops with ClearSeptember 1983Revised January 2001MM74HC273Octal D-Type ..
MM74HC27N ,Triple 3-Input NOR GateMM54HC27/MM74HC27Triple3-InputNORGateJanuary1988MM54HC27/MM74HC27Triple3-InputNORGateGeneralDescrip ..
MM74HC27N ,Triple 3-Input NOR GateMM54HC27/MM74HC27Triple3-InputNORGateJanuary1988MM54HC27/MM74HC27Triple3-InputNORGateGeneralDescrip ..
MM74HC280N ,9-Bit Odd/Even Parity Generator/CheckerMM54HC280/MM74HC2809-BitOdd/EvenParityGenerator/CheckerJanuary1988MM54HC280/MM74HC2809-BitOdd/EvenP ..
MM74HC299N ,8-Bit TRI-STATE Universal Shift RegisterMM54HC299/MM74HC2998-BitTRI-STATEUniversalShiftRegisterJanuary1988MM54HC299/MM74HC2998-BitTRI-STATE ..
MM74HC30N ,8-Input NAND GateMM54HC30/MM74HC308-InputNANDGateJanuary1988MM54HC30/MM74HC308-InputNANDGateGeneralDescription
MJE800STU-MJE803STU
NPN Epitaxial Silicon Darlington Transistor
MJE800/801/802/803 MJE800/801/802/803 Monolithic Construction With Built-in Base- Emitter Resistors High DC Current Gain : h = 750 (Min.) @ I = 1.5 and 2.0A DC FE C Complement to MJE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings T =25°C unless otherwise noted Equivalent Circuit C C Symbol Parameter Value Units V Collector- Base Voltage : MJE800/801 60 V CBO : MJE802/803 80 V B V Collector-Emitter Voltage : MJE800/801 60 V CEO : MJE802/803 80 V V Emitter-Base Voltage 5 V EBO I Collector Current 4 A C R1 R2 I Base Current 0.1 A B P Collector Dissipation (T =25°C) 40 W E R11 ≅ 0kΩ C C R20 ≅ .6kΩ T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units BV Collector-Emitter Breakdown Voltage I = 50mA, I = 0 CEO C B : MJE800/801 60 V : MJE802/803 80 V I Collector Cut-off Current CEO : MJE800/801 V = 60V, I = 0 100 μA CE B : MJE802/803 V = 80V, I = 0 100 μA CE B I Collector Cut-off Current V = Rated BV , I = 0 100 μA CBO CB CEO E V = Rated BV , I = 0 500 μA CB CEO E T = 100°C C I Emitter Cut-off Current V = 5V, I = 0 2 mA EBO BE C h DC Current Gain : MJE800/802 V = 3V, I = 1.5A 750 FE CE C : MJE801/803 V = 3V, I = 2A 750 CE C : ALL DEVICES V = 3V, I = 4A 100 CE C V (sat) Collector-Emitter Saturation Voltage CE : MJE800/802 I = 1.5A, I = 30mA 2.5 V C B : MJE801/803 I = 2A, I = 40mA 2.8 V C B : ALL DEVICES I = 4A, I = 40mA 3 V C B V (on) Base-Emitter ON Voltage BE : MJE800/802 V = 3V, I = 1.5A 2.5 V CE C : MJE801/803 V = 3V, I = 2A 2.5 V CE C : ALL DEVICES V = 3V, I = 4A 3 V CE C ©2001 Rev. A1, February 2001
