MJE700STU ,PNP Epitaxial Silicon Darlington TransistorMJE700/701/702/703MJE700/701/702/703Monolithic Construction With Built-in Base-Emitter Resistors H ..
MJE702 ,Leaded Power Transistor DarlingtonMAXIMUM RATINGSÎSILICONMJE70240 WATTÎÎÎÎÎÎMJE70350 WATTMJE700 MJE802ÎÎÎÎÎÎMJE800Rating Symbol MJE80 ..
MJE702G , 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT
MJE720 , COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS
MJE720 , COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS
MJE800 ,Leaded Power Transistor Darlington2P , POWER DISSIPATION (WATTS)DMJE700 MJE702 MJE703 MJE800 MJE802 MJE8034.0V V = 30 V I = ICC CC B1 ..
MM74HC273MTC ,Octal D-Type Flip-Flop with ClearMM74HC273 Octal D-Type Flip-Flops with ClearSeptember 1983Revised January 2001MM74HC273Octal D-Type ..
MM74HC273MTCX ,Octal D-Type Flip-Flop with ClearMM74HC273 Octal D-Type Flip-Flops with ClearSeptember 1983Revised January 2001MM74HC273Octal D-Type ..
MM74HC273N ,Octal D-Type Flip-Flop with ClearMM74HC273 Octal D-Type Flip-Flops with ClearSeptember 1983Revised January 2001MM74HC273Octal D-Type ..
MM74HC273SJ ,Octal D-Type Flip-Flop with ClearFeaturesThe MM74HC273 edge triggered flip-flops utilize advanced
MJE700STU
PNP Epitaxial Silicon Darlington Transistor
MJE700/701/702/703 MJE700/701/702/703 Monolithic Construction With Built-in Base- Emitter Resistors High DC Current Gain : h = 750 (Min.) @ I = -1.5 and -2.0A DC FE C Complement to MJE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Equivalent Circuit C Sym- Unit Parameter Value bol s V Collector- Base Voltage : MJE700/701 - 60 V CBO : MJE702/703 - 80 V B V Collector-Emitter Voltage : MJE700/701 - 60 V CEO : MJE702/703 - 80 V V Emitter- Base Voltage - 5 V EBO I Collector Current - 4 A R1 R2 C I Base Current - 0.1 A B E R11 ≅ 0kΩ P Collector Dissipation (T =25°C) 40 W R20 ≅ .6kΩ C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units BV Collector-Emitter Breakdown Voltage CEO : MJE700/701 I = - 10mA, I = 0 -60 V C B : MJE702/703 -80 V I Collector Cut-off Current CEO : MJE700/701 V = - 60V, I = 0 -100 μA CE B : MJE702/703 V = - 80V, I = 0 -100 μA CE B I Collector Cut-off Current V = Rated BV , I = 0 -100 μA CBO CB CEO E V = Rated BV , I = 0 -500 μA CB CEO E T = 100°C C I Emitter Cut-off Current V = - 5V, I = 0 -2 mA EBO BE C h DC Current Gain FE : MJE700/702 V = - 3V, I = - 1.5A 750 CE C : MJE701/703 V = - 3V, I = - 2A 750 CE C : ALL DEVICES V = - 3V, I = - 4A 100 CE C V (sat) Collector-Emitter Saturation Voltage CE : MJE700/702 I = - 1.5A, I = - 30mA -2.5 V C B : MJE701/703 I = - 2A, I = - 40mA -2.8 V C B : ALL DEVICES I = - 4A, I = - 40mA -3 V C B V (on) Base-Emitter On Voltage BE : MJE700/702 V = - 3V, I = - 1.5A -1.2 V CE C : MJE701/703 V = - 3V, I = - 2A -2.5 V CE C : ALL DEVICES V = - 3V, I = - 4A -3 V CE C ©2001 Rev. A1, February 2001
