MJE350STU ,PNP Epitaxial Silicon TransistorApplications High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to MJ ..
MJE371 ,Leaded Power Transistor General PurposeELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CÎÎÎÎÎCharacteristic Symbol Min Max Uni ..
MJE4342 ,POWER TRANSISTORS(16A,100-160V,125W)
MJE5730 ,1.0 AMPERE POWER TRANSISTORS PNP SILICON 300-350-400 VOLTS 40 WATTSMAXIMUM RATINGSÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ..
MJE5731 ,Power 1A 350V Discrete PNPTHERMAL CHARACTERISTICSÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ..
MJE5731A ,1.0 AMPERE POWER TRANSISTORS PNP SILICON 300-350-400 VOLTS 40 WATTSMAXIMUM RATINGSÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ..
MM74HC259M ,8-Bit Addressable Latch/3-to-8 Line DecoderMM74HC259 8-Bit Addressable Latch/3-to-8 Line DecoderSeptember 1983Revised February 1999MM74HC2598- ..
MM74HC259MTC ,8-Bit Addressable Latch/3-to-8 Line Decoderapplications in digitallatches are cleared to a LOW state. If enable is LOW allsystems.latches exce ..
MM74HC259MTCX ,8-Bit Addressable Latch/3-to-8 Line DecoderMM74HC259 8-Bit Addressable Latch/3-to-8 Line DecoderSeptember 1983Revised February 1999MM74HC2598- ..
MM74HC259MTCX ,8-Bit Addressable Latch/3-to-8 Line DecoderFeaturesENABLE is taken LOW the data flows through to theaddressed output. The data is stored when ..
MM74HC259MX ,8-Bit Addressable Latch/3-to-8 Line DecoderFeaturesENABLE is taken LOW the data flows through to theaddressed output. The data is stored when ..
MM74HC259MX ,8-Bit Addressable Latch/3-to-8 Line Decoderapplications in digitallatches are cleared to a LOW state. If enable is LOW allsystems.latches exce ..
MJE350STU
PNP Epitaxial Silicon Transistor
MJE350 MJE350 High Voltage General Purpose Applications High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to MJE340 TO-126 1 1. Emitter 2.Collector 3.Base ..PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage - 300 V CBO V Collector-Emitter Voltage - 300 V CEO V Emitter-Base Voltage - 5 V EBO I Collector Current - 500 mA C P Collector Dissipation (T =25°C) 20 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units BV Collector-Emitter Breakdown Voltage I = - 1mA, I = 0 -300 V CEO C B I Collector Cut-off Current V = - 300V, I = 0 -100 μA CBO CB E I Emitter Cut-off Current V = - 3V, I = 0 -100 μA EBO BE C h DC Current Gain V = - 10V, I = - 50mA 30 240 FE CE C ©2001 Rev. A1, February 2001
