MJE3440 ,Leaded Power Transistor General PurposeMJE3440SILICON NPN TRANSISTOR ..
MJE3440 ,Leaded Power Transistor General PurposeMJE3440SILICON NPN TRANSISTOR ..
MJE350 ,Leaded Power Transistor General PurposeMJE340MJE350COMPLEMETARY SILICON POWER TRANSISTORS■ SGS-THOMSON PREFERRED SALESTYPES■ COMPLEMENTARY ..
MJE350STU ,PNP Epitaxial Silicon TransistorApplications High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to MJ ..
MJE371 ,Leaded Power Transistor General PurposeELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CÎÎÎÎÎCharacteristic Symbol Min Max Uni ..
MJE4342 ,POWER TRANSISTORS(16A,100-160V,125W)
MM74HC251M ,8-Channel 3-STATE MultiplexerGeneral Descriptionfunction, as well as pinout compatible with the standardThe MM74HC251 8-channel ..
MM74HC251MTC ,8-Channel 3-STATE MultiplexerFeaturesput drive capability and 3-STATE feature make this partideally suited for interfacing with ..
MM74HC251MTCX ,8-Channel 3-STATE MultiplexerMM74HC251 8-Channel 3-STATE MultiplexerSeptember 1983Revised February 1999MM74HC2518-Channel 3-STAT ..
MM74HC251MX ,8-Channel 3-STATE Multiplexerfeatures both true (Y) and complement Wide supply range: 2–6V(W) outputs as well as a STROBE input. ..
MM74HC251N ,8-Channel 3-STATE Multiplexerfeatures both true (Y) and complement Wide supply range: 2–6V(W) outputs as well as a STROBE input. ..
MM74HC251N ,8-Channel 3-STATE MultiplexerFeaturesput drive capability and 3-STATE feature make this partideally suited for interfacing with ..
MJE3440
Leaded Power Transistor General Purpose
MJE3440SILICON NPN TRANSISTOR
SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR
DESCRIPTION The MJE3440 is a NPN silicon epitaxial planar
transistors in SOT-32 plastic package. It is
designed for use in consumer and industrial
line-operated applications.
June 1997
ABSOLUTE MAXIMUM RATINGS1/5
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300μs, duty cycle ≤ 1.5 %
Safe Operating Area Derating Curve
MJE34402/5
DC Current Gain
Base-emitter Voltage
Collector-emitter Saturation Voltage
Transition Frequency
MJE34403/5
MJE34404/5
. However, SGS-THOMSON Microelectronics assumes no responsability for the
or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
MJE34405/5
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