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MJE340STUFAIRCHILN/a75avaiNPN Epitaxial Silicon Transistor


MJE340STU ,NPN Epitaxial Silicon TransistorApplications High Collector-Emitter Breakdown Voltage  Suitable for Transformer Complement to MJ ..
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MM74HC251M ,8-Channel 3-STATE MultiplexerGeneral Descriptionfunction, as well as pinout compatible with the standardThe MM74HC251 8-channel ..
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MM74HC251MX ,8-Channel 3-STATE Multiplexerfeatures both true (Y) and complement Wide supply range: 2–6V(W) outputs as well as a STROBE input. ..
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MJE340STU
NPN Epitaxial Silicon Transistor
MJE340 MJE340 High Voltage General Purpose Applications  High Collector-Emitter Breakdown Voltage  Suitable for Transformer  Complement to MJE350 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 300 V CBO V Collector-Emitter Voltage 300 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 500 mA C P Collector Dissipation (T =25°C) 20 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units BV Collector-Emitter Breakdown Voltage I = 1mA, I = 0 300 V CEO C B I Collector Cut-off Current V = 300V, I =0 100 μA CBO CB E I Emitter Cut-off Current V = 3V, I = 0 100 μA EBO BE C h DC Current Gain V = 10V, I = 50mA 30 240 FE CE C ©2001 Rev. A1, February 2001
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