MJE340STU ,NPN Epitaxial Silicon TransistorApplications High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to MJ ..
MJE3439 ,Leaded Power Transistor General Purpose
MJE3439 ,Leaded Power Transistor General Purpose
MJE344 ,Leaded Power Transistor General Purpose
MJE344 ,Leaded Power Transistor General Purpose
MJE3440 ,Leaded Power Transistor General PurposeMJE3440SILICON NPN TRANSISTOR ..
MM74HC251M ,8-Channel 3-STATE MultiplexerMM74HC251 8-Channel 3-STATE MultiplexerSeptember 1983Revised February 1999MM74HC2518-Channel 3-STAT ..
MM74HC251M ,8-Channel 3-STATE MultiplexerGeneral Descriptionfunction, as well as pinout compatible with the standardThe MM74HC251 8-channel ..
MM74HC251MTC ,8-Channel 3-STATE MultiplexerFeaturesput drive capability and 3-STATE feature make this partideally suited for interfacing with ..
MM74HC251MTCX ,8-Channel 3-STATE MultiplexerMM74HC251 8-Channel 3-STATE MultiplexerSeptember 1983Revised February 1999MM74HC2518-Channel 3-STAT ..
MM74HC251MX ,8-Channel 3-STATE Multiplexerfeatures both true (Y) and complement Wide supply range: 2–6V(W) outputs as well as a STROBE input. ..
MM74HC251N ,8-Channel 3-STATE Multiplexerfeatures both true (Y) and complement Wide supply range: 2–6V(W) outputs as well as a STROBE input. ..
MJE340STU
NPN Epitaxial Silicon Transistor
MJE340 MJE340 High Voltage General Purpose Applications High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to MJE350 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 300 V CBO V Collector-Emitter Voltage 300 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 500 mA C P Collector Dissipation (T =25°C) 20 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units BV Collector-Emitter Breakdown Voltage I = 1mA, I = 0 300 V CEO C B I Collector Cut-off Current V = 300V, I =0 100 μA CBO CB E I Emitter Cut-off Current V = 3V, I = 0 100 μA EBO BE C h DC Current Gain V = 10V, I = 50mA 30 240 FE CE C ©2001 Rev. A1, February 2001
