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MJE243-MJE253 Fast Delivery,Good Price
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Partno	Mfg	Dc	Qty	Available	Descript
MJE243	ON	N/a	4000	avai	Leaded Power Transistor General Purpose
MJE243		N/a	10	avai	Leaded Power Transistor General Purpose
MJE253	ON	N/a	2	avai	Leaded Power Transistor General Purpose

MJE243 ,Leaded Power Transistor General Purpose
ON SemiconductorNPNComplementary Silicon Power MJE243*PNPPlastic Transistors*MJE253...designed for ..
MJE243 ,Leaded Power Transistor General Purpose2TCP , POWER DISSIPATION (WATTS)DMJE243 MJE253VCC+
30 V1K500tRrC 30025 μs200SCOPE+11 VRB100050D51 1 ..
MJE243 ,Leaded Power Transistor General Purpose
MJE243G , Complementary Silicon Power Plastic Transistors 100 VOLTS, 15 WATTS
MJE253 ,Leaded Power Transistor General PurposeELECTRICAL CHARACTERISTICS (T = 25
C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
MJE270 , 15.000W Darlington NPN Plastic Leaded Transistor. 100V Vceo, 4.000A Ic, 500 hFE.ELECTRICAL CHARACTERISTICS (T = 25
C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
MM74HC244SJX ,Octal 3-STATE BufferFeaturesThe MM74HC244 is a non-inverting buffer and has two

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MJE243-MJE253
Leaded Power Transistor General Purpose
Complementary Silicon Power
Plastic Transistors.. designed for low power audio amplifier and low–current,
high–speed switching applications. High Collector–Emitter Sustaining V oltage —
VCEO(sus) = 100 Vdc (Min) — MJE243, MJE253 High DC Current Gain @ IC = 200 mAdc
hFE = 40–200
= 40–120 — MJE243, MJE253 Low Collector–Emitter Saturation Voltage —
VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc High Current Gain Bandwidth Product —
fT = 40 MHz (Min) @ IC = 100 mAdc Annular Construction for Low Leakages
ICBO = 100 nAdc (Max) @ Rated VCB
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*ON Semiconductor Preferred Device

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