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Partno	Mfg	Dc	Qty	Available	Descript
MJE2360T	MOT	N/a	50	avai	0.5 AMPERE POWER TRANSISTORS NPN SILICON 350 VOLTS 30 WATTS
MJE2361T	MOT	N/a	1222	avai	POWER TRANSISTORS(0.5A,350V,30W)

MJE2361T ,POWER TRANSISTORS(0.5A,350V,30W)THERMAL CHARACTERISTICSÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ..
MJE243 ,Leaded Power Transistor General Purpose
ON SemiconductorNPNComplementary Silicon Power MJE243*PNPPlastic Transistors*MJE253...designed for ..
MJE243 ,Leaded Power Transistor General Purpose2TCP , POWER DISSIPATION (WATTS)DMJE243 MJE253VCC+
30 V1K500tRrC 30025 μs200SCOPE+11 VRB100050D51 1 ..
MJE243 ,Leaded Power Transistor General Purpose
MJE243G , Complementary Silicon Power Plastic Transistors 100 VOLTS, 15 WATTS
MJE253 ,Leaded Power Transistor General PurposeELECTRICAL CHARACTERISTICS (T = 25
C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
MM74HC244SJ ,Octal 3-STATE BufferFeaturesThe MM74HC244 is a non-inverting buffer and has two

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MJE2360T-MJE2361T
0.5 AMPERE POWER TRANSISTORS NPN SILICON 350 VOLTS 30 WATTS
.. useful for general–purpose, high voltage applications requiring high fT. Collector–Emitter Sustaining Voltage —VCEO(sus) = 350 Vdc (Min) @ IC = 2.5 mAdc DC Current Gain —
hFE = 40 (Min) @ IC = 100 mAdc — MJE2361T Current–Gain–Bandwidth Product —
fT = 10 MHz (Typ) @ IC = 50 mAdc
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ÎÎÎ0 40 80 120 160
Figure 1. Power–Temperature Derating Curve
TC, CASE TEMPERATURE (°C)
, POWER DISSIP
TION (W
TTS) 30
5.0 60 100 140

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