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Partno	Mfg	Dc	Qty	Available	Descript
MJE18204	ON	N/a	200	avai	POWER TRANSISTORS 5 AMPERES 1200 VOLTS 35 and 75 WATTS

MJE18204 ,POWER TRANSISTORS 5 AMPERES 1200 VOLTS 35 and 75 WATTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Unit ..
MJE182G , Complementary Plastic Silicon Power Transistors 40 − 60 − 80 VOLTS 12.5 WATTS
MJE200 ,40 V, 5 A, NPN epitaxial silicon transistorELECTRICAL CHARACTERISTICS (T = 25
C unless otherwise noted)CÎÎÎÎÎCharacteristic Symbol Min Max Uni ..
MJE200G , Complementary Silicon Power Plastic Transistors
MJE200STU ,NPN Epitaxial Silicon TransistorMJE200MJE200Feature• Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product ..
MJE200STU ,NPN Epitaxial Silicon TransistorMJE200MJE200Feature• Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product ..
MM74HC221AN ,Dual Non-Retriggerable Monostable MultivibratorFeaturesThe MM74HC221A high speed monostable multivibrators

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MJE18204
SWITCHMODE™ NPN Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications
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The MJE/MJF18204 have an application specific state–of–the–art die dedicated to
the electronic ballast (“light ballast”) and power supply applications. Improved Global Efficiency Due to Low Base Drive Requirements: High and Flat DC Current Gain hFE Fast Switching No Coil Required in Base Circuit for Fast Turn–Off (No Current Tail) Full Characterization at 125C Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible Parametric
Distributions Two Package Choices: Standard TO–220 or Isolated TO–220
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(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
(2) Proper strike and creepage distance must be provided.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

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