MJE180STU ,NPN Epitaxial Silicon TransistorApplicationsTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon Transistor Absolute Max ..
MJE180-STU ,NPN Epitaxial Silicon TransistorApplicationsTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon Transistor Absolute Max ..
MJE181 ,Leaded Power Transistor General Purpose
MJE181 ,Leaded Power Transistor General Purpose
MJE181STU ,NPN Epitaxial Silicon TransistorMJE180/181/182MJE180/181/182Low Power Audio Amplifier Low Current High Speed Switching
MJE182 ,Leaded Power Transistor General PurposeMJE172MJE182®COMPLEMENTARY SILICON POWER TRANSISTORS■ SGS-THOMSON PREFERRED SALESTYPES■ COMPLEMENTA ..
MM74HC221AM ,Dual Non-Retriggerable Monostable Multivibratorfeatures both a negative, A, and a posi-
MJE180STU-MJE180-STU-MJE181STU
NPN Epitaxial Silicon Transistor
MJE180/181/182 MJE180/181/182 Low Power Audio Amplifier Low Current High Speed Switching Applications TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage : MJE180 60 V CBO : MJE181 80 V : MJE182 100 V V Collector-Emitter Voltage : MJE180 40 V CEO : MJE181 60 V : MJE182 80 V V Emitter-Base Voltage 7 V EBO I Collector Current (DC) 3 A C I Collector Current (Pulse) 6 A CP I Base Current 1 A B P Collector Dissipation (T =25°C) 1.5 W C a P Collector Dissipation (T =25°C) 12.5 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units BV Collector -Emitter Breakdown Voltage CEO : MJE180 I = 10mA, I = 0 40 V C B : MJE181 60 V : MJE182 80 V I Collector Cut-off Current : MJE180 V = 60V, I = 0 0.1 μA CBO CB B : MJE181 V = 80V, I = 0 0.1 μA CB E : MJE182 V = 100V, I = 0 0.1 μA CB E : MJE180 V = 60V, I = 0 @ T = 150°C 0.1 mA CB E C : MJE181 V = 80V, I = 0 @ T = 150°C 0.1 mA CB E C : MJE182 V = 100V, I = 0 @ T = 150°C 0.1 mA CB E C I Emitter Cut-off Current V = 7V, I = 0 0.1 μA EBO BE C h DC Current Gain V = 1V, I = 100mA 50 250 FE CE C V = 1V, I = 500mA 30 CE C V = 1V, I = 1.5A 12 CE C V (sat) Collector-Emitter Saturation Voltage I = 500mA, I = 50mA 0.3 V CE C B I = 1.5A, I = 150mA 0.9 V C B I = 3A, I = 600mA 1.7 V C B V (sat) Base-Emitter Saturation Voltage I = 1.5A, I = 150mA 1.5 V BE C B I = 3A, I = 600mA 2.0 V C B V (on) Base-Emitter ON Voltage V = 1V, I = 500mA 1.2 V BE CE C f Current Gain Bandwidth Product V = 10V, I = 100mA 50 MHz T CE C C Output Capacitance V = 10V, I = 0, f = 0.1MHz 30 pF ob CB E ©2001 Rev. A1, February 2001
