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Partno	Mfg	Dc	Qty	Available	Descript
MJE18008	MOT	N/a	9	avai	POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTS

MJE18008 ,POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTSELECTRICAL CHARACTERISTICS (T = 25ÎÎÎÎ * C unless otherwise specified)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ..
MJE180STU ,NPN Epitaxial Silicon TransistorApplicationsTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon Transistor Absolute Max ..
MJE180-STU ,NPN Epitaxial Silicon TransistorApplicationsTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon Transistor Absolute Max ..
MJE181 ,Leaded Power Transistor General Purpose
MJE181 ,Leaded Power Transistor General Purpose
MJE181STU ,NPN Epitaxial Silicon TransistorMJE180/181/182MJE180/181/182Low Power Audio Amplifier Low Current High Speed Switching
MM74HC194N ,4-Bit Bidirectional Universal Shift RegisterMM54HC194/MM74HC1944-BitBidirectionalUniversalShiftRegisterNovember1995MM54HC194/MM74HC1944-BitBidi ..
MM74HC221AM ,Dual Non-Retriggerable Monostable Multivibratorfeatures both a negative, A, and a posi-

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MJE18008
POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTS
 - NPN Bipolar Power Transistor
For Switching Power Supply Applications
The MJE/MJF18008 have an applications specific state–of–the–art die designed
for use in 220 V line–operated Switchmode Power supplies and electronic light
ballasts. These high voltage/high speed transistors offer the following: Improved Efficiency Due to Low Base Drive Requirements:
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(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%. (continued)
(2) Proper strike and creepage distance must be provided.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
*Motorola Preferred Device

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