MJD50T4 ,Power 1A 400V SM NPNMJD50®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPE■ HIGH ..
MJD50T4 ,Power 1A 400V SM NPNMJD50®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPE■ HIGH ..
MJD50T4 ,Power 1A 400V SM NPNMAXIMUM RATINGSÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ RatingÎÎÎÎÎÎÎÎÎÎÎÎ Symbo ..
MJD50TF ,NPN Epitaxial Silicon TransistorApplications• Load Formed for Surface Mount Application (No Suffix)• Straight Lead (I-PAK, “- I” Su ..
MJD5731T4 ,High Voltage PNP Silicon Power Transistors20.243 0.1906.172 4.8260.0631.60.1002.540.118 0.1653.0 4.191MJD57312001.4V = 10 VCE1.2100T = 150°CJ ..
MJD6039 ,SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTSELECTRICAL CHARACTERISTICS10.7D = 0.50.50.30.20.2P(pk)0.1R = r(t) RJC(t) JC0.05R = 6.25°C/WJC0.1 ..
MM74HC14SJX ,Hex Inverting Schmitt TriggerElectrical Characteristics V = 5V, T = 25°C, C = 15 pF, t = t = 6 nsCC A L r fSymbol Parameter Cond ..
MM74HC14SJX ,Hex Inverting Schmitt TriggerElectrical Characteristics (Note 4)T = 25°CT = −40 to 85°CT = −55 to 125°CA A A VSymbol Parameter ..
MM74HC151M ,8-Channel Digital MultiplexerMM74HC151 8-Channel Digital MultiplexerSeptember 1983Revised February 1999MM74HC1518-Channel Digita ..
MM74HC151MTC ,8-Channel Digital MultiplexerMM74HC151 8-Channel Digital MultiplexerSeptember 1983Revised February 1999MM74HC1518-Channel Digita ..
MM74HC151MTCX ,8-Channel Digital Multiplexerfeatures both true (Y) and comple- Wide operating supply voltage range: 2–6Vment (W) outputs. The S ..
MM74HC151MX ,8-Channel Digital MultiplexerMM74HC151 8-Channel Digital MultiplexerSeptember 1983Revised February 1999MM74HC1518-Channel Digita ..
MJD50T4
Power 1A 400V SM NPN
MJD50HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR STMicroelectronics PREFERRED
SALESTYPE HIGH VOLTAGE CAPABILITY SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4") ELECTRICALLY SIMILAR TO TIP50
APPLICATIONS SWITCH MODE POWER SUPPLIES AUDIO AMPLIFIERS GENERAL PURPOSE SWITCHING AND
AMPLIFIER
DESCRIPTION The MJD50 is manufactured using Medium
Voltage Epitaxial Planar technology, resulting in a
rugged high performance cost-effective transistor.
January 2000
ABSOLUTE MAXIMUM RATINGS1/6
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
Safe Operating Area Derating Curves
MJD502/6
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Base Capacitance
MJD503/6
Switching Time Inductive Load Switching Time Inductive Load
Switching Time Inductive Load Switching Time Inductive Load
MJD504/6
MJD505/6
. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved
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MJD506/6
