MJD47TF ,NPN Epitaxial Silicon TransistorMJD47/50MJD47/50High Voltage and High Reliability D-PAK for Surface Mount
MJD50 ,NPN Epitaxial Silicon Transistorhttp://onsemi.com2MJD47, MJD50TYPICAL CHARACTERISTICST TA CVCC2.5 25 TURN-ON PULSERCAPPROX+11 VSCOP ..
MJD50 ,NPN Epitaxial Silicon TransistorApplications• Load Formed for Surface Mount Application (No Suffix)• Straight Lead (I-PAK, “- I” Su ..
MJD50T4 ,Power 1A 400V SM NPNMJD50®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPE■ HIGH ..
MJD50T4 ,Power 1A 400V SM NPNMJD50®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPE■ HIGH ..
MJD50T4 ,Power 1A 400V SM NPNMAXIMUM RATINGSÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ RatingÎÎÎÎÎÎÎÎÎÎÎÎ Symbo ..
MM74HC14N ,Hex Inverting Schmitt TriggerMM74HC14 Hex Inverting Schmitt TriggerSeptember 1983Revised January 2005MM74HC14Hex Inverting Schmi ..
MM74HC14SJX ,Hex Inverting Schmitt TriggerElectrical Characteristics V = 5V, T = 25°C, C = 15 pF, t = t = 6 nsCC A L r fSymbol Parameter Cond ..
MM74HC14SJX ,Hex Inverting Schmitt TriggerElectrical Characteristics (Note 4)T = 25°CT = −40 to 85°CT = −55 to 125°CA A A VSymbol Parameter ..
MM74HC151M ,8-Channel Digital MultiplexerMM74HC151 8-Channel Digital MultiplexerSeptember 1983Revised February 1999MM74HC1518-Channel Digita ..
MM74HC151MTC ,8-Channel Digital MultiplexerMM74HC151 8-Channel Digital MultiplexerSeptember 1983Revised February 1999MM74HC1518-Channel Digita ..
MM74HC151MTCX ,8-Channel Digital Multiplexerfeatures both true (Y) and comple- Wide operating supply voltage range: 2–6Vment (W) outputs. The S ..
MJD47TF-MJD50TF
NPN Epitaxial Silicon Transistor
MJD47/50 MJD47/50 High Voltage and High Reliability D-PAK for Surface Mount Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP47 and TIP50 D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Emitter Voltage CBO : MJD47 350 V : MJD50 500 V V Collector-Emitter Voltage CEO : MJD47 250 V : MJD50 400 V V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 1 A C I Collector Current (Pulse) 2 A CP I Base Current 0.6 A B P Collector Dissipation (T =25°C) 15 W C C Collector Dissipation (T =25°C) 1.56 W a T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) * Collector-Emitter Sustaining Voltage CEO : MJD47 I = 30mA, I = 0 250 V C B : MJD50 400 V I Collector Cut-off Current CEO : MJD47 V = 150V, I = 0 0.2 mA CE B : MJD50 V = 300V, I = 0 0.2 mA CE B I Collector Cut-off Current CES : MJD47 V = 350, V = 0 0.1 mA CE EB : MJD50 V = 500, V = 0 0.1 mA CE EB I Emitter Cut-off Current V = 5V, I = 0 1 mA EBO BE C h * DC Current Gain V = 10V, I = 0.3A 30 150 FE CE C V = 10V, I = 1A 10 CE C V (sat) * Collector-Emitter Saturation Voltage I = 1A, I = 0.2A 1 V CE C B V (sat) * Base-Emitter Saturation Voltage V = 10A, I = 1A 1.5 V BE CE C f Current Gain Bandwidth Product V =10V, I = 0.2A 10 MHz T CE C * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2001 Rev. A2, June 2001
