MJD45H11TM ,PNP Epitaxial Silicon TransistorApplications Load Formed for Surface Mount Application (No Suffix)D-PAK I-PAK11 Straight Lead (I- ..
MJD45H11TM ,PNP Epitaxial Silicon TransistorApplications D-PAK for Surface Mount
MJD47 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
MJD47 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ..
MJD47T4 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORMJD47®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPE■ HIGH ..
MJD47TF ,NPN Epitaxial Silicon TransistorMJD47/50MJD47/50High Voltage and High Reliability D-PAK for Surface Mount
MM74HC14MX ,Hex Inverting Schmitt TriggerMM74HC14 Hex Inverting Schmitt TriggerSeptember 1983Revised January 2005MM74HC14Hex Inverting Schmi ..
MM74HC14N ,Hex Inverting Schmitt TriggerMM74HC14 Hex Inverting Schmitt TriggerSeptember 1983Revised January 2005MM74HC14Hex Inverting Schmi ..
MM74HC14SJX ,Hex Inverting Schmitt TriggerElectrical Characteristics V = 5V, T = 25°C, C = 15 pF, t = t = 6 nsCC A L r fSymbol Parameter Cond ..
MM74HC14SJX ,Hex Inverting Schmitt TriggerElectrical Characteristics (Note 4)T = 25°CT = −40 to 85°CT = −55 to 125°CA A A VSymbol Parameter ..
MM74HC151M ,8-Channel Digital MultiplexerMM74HC151 8-Channel Digital MultiplexerSeptember 1983Revised February 1999MM74HC1518-Channel Digita ..
MM74HC151MTC ,8-Channel Digital MultiplexerMM74HC151 8-Channel Digital MultiplexerSeptember 1983Revised February 1999MM74HC1518-Channel Digita ..
MJD45H11TF-MJD45H11TM
PNP Epitaxial Silicon Transistor
MJD45H11 MJD45H11 General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications Load Formed for Surface Mount Application (No Suffix) D-PAK I-PAK 11 Straight Lead (I-PAK: “-I” Suffix) Electrically Similar to Popular MJE45H 1.Base 2.Collector 3.Emitter Fast Switching Speeds Low Collector Emitter Saturation Voltage PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Emitter Voltage - 80 V CEO V Emitter-Base Voltage - 5 V EBO I Collector Current (DC) - 8 A C I Collector Current (Pulse) - 16 A CP P Collector Dissipation (T =25°C) 20 W C C Collector Dissipation (T =25°C) 1.75 W a T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units V (sus) *Collector-Emitter Sustaining Voltage I = - 30mA, I = 0 - 80 V CEO C B I Collector Cut-off Current V = - 80V, I = 0 - 10 μA CEO CE B I Emitter Cut-off Current V = - 5V, I = 0 - 50 μA EBO BE C h *DC Current Gain V = - 1V, I = - 2A 60 FE CE C V = - 1V, I = - 4A 40 CE C V (sat) *Collector-Emitter Saturation Voltage I = - 8A, I = - 0.4A - 1 V CE C B V (on) *Base-Emitter Saturation Voltage I = - 8A, I = - 0.8A - 1.5 V BE C B f Current Gain Bandwidth Product V = - 10A, I = - 0.5A 40 MHz T CE C C Collector Capacitance V = - 10V, f = 1MHz 230 pF ob CB t Turn On Time I = - 5A 135 ns ON C I = - I = - 0.5A t Storage Time B1 B2 500 ns STG t Fall Time 100 ns F * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2003 Rev. C2, July 2003
