MJD45H11G ,SILICON POWER TRANSISTORS3MJD44H11 (NPN) MJD45H11 (PNP)10.7D = 0.50.50.30.20.2P(pk)R = r(t) RJC(t) JC0.1R = 6.25°C/W MAXJ ..
MJD45H11RL ,Power 10A 80V PLA PNPFeatures8 AMPERES• Pb−Free Packages are Available80 VOLTS• Lead Formed for Surface Mount Applicatio ..
MJD45H11RLG , Complementary Power Transistors
MJD45H11T4 ,SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS2MJD44H11 (NPN) MJD45H11 (PNP)ORDERING INFORMATION†Device Package Type Package ShippingMJD44H11 DPA ..
MJD45H11T4 ,SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTSTHERMAL CHARACTERISTICSÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ..
MJD45H11T4G ,SILICON POWER TRANSISTORSMAXIMUM RATINGS STYLE 11Rating Symbol Max Unit23Collector−Emitter Voltage V 80 VdcCEOEmitter−Base V ..
MM74HC14MTC ,Hex Inverting Schmitt TriggerFeaturesThe MM74HC14 utilizes advanced silicon-gate CMOS
MJD44H11G-MJD44H11T4G-MJD45H11G-MJD45H11T4G
SILICON POWER TRANSISTORS
MJD44H11 (NPN)
MJD45H11 (PNP)
Preferred Device Complementary Power
Transistors
DPAK For Surface Mount ApplicationsDesigned for general purpose power and switching such as output or
driver stages in applications such as switching regulators, converters,
and power amplifiers.
Features Pb−Free Packages are Available Lead Formed for Surface Mount Application in Plastic Sleeves
(No Suffix) Straight Lead Version in Plastic Sleeves (“−1” Suffix) Lead Formed Version in 16 mm Tape and Reel for Surface Mount
(“T4” Suffix) Electrically Similar to Popular D44H/D45H Series Low Collector Emitter Saturation Voltage −
VCE(sat) = 1.0 Volt Max @ 8.0 Amperes Fast Switching Speeds Complementary Pairs Simplifies Designs Epoxy Meets UL 94, V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B � 8000 V
Machine Model, C � 400 V
MAXIMUM RATINGSMaximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
SILICON
POWER TRANSISTORS
8 AMPERES
80 VOLTS
20 WATTS
DPAK−3
CASE 369D
STYLE 1
DPAK
CASE 369C
STYLE 1
MARKING
DIAGRAMS
Preferred devices are recommended choices for future useand best overall value. = Year = Work Week = 4 or 52
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION3
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