MJD41C ,SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS 20 WATTSTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction−to−Case R 6.25 °C ..
MJD41CRL ,Power 6A 100V NPNhttp://onsemi.com2MJD41C (NPN) MJD42C (PNP)TYPICAL CHARACTERISTICST T VA C CC+30 V2.5 25RC2 2025 ..
MJD41CT4 ,Power 6A 100V NPNMAXIMUM RATINGSRating Symbol Max Unit4Collector−Emitter Voltage V 100 VdcCEODPAK−3YWWCollector−Base ..
MJD41CT4G , Complementary Power Transistors
MJD41CTF ,NPN Epitaxial Silicon TransistorApplications• Load Formed for Surface Mount Application (No Suffix)D-PAK I-PAK11• Straight Lead (I- ..
MJD42 ,General Purpose AmplifierApplications• Load Formed for Surface Mount Application (No Suffix)• Straight Lead (I-PAK, “- I” Su ..
MM74HC133N ,13-Input NAND GateMM54HC133/MM74HC13313-InputNANDGateJanuary1988MM54HC133/MM74HC13313-InputNANDGateGeneralDescription
MM74HC138M ,3 to 8 Line DecoderGeneral DescriptionTTL equivalent loads, and are functionally and pin equiva-The MM74HC138 decoder ..
MM74HC138MX ,3 to 8 Line DecoderMM74HC138 3-to-8 Line DecoderSeptember 1983Revised February 1999MM74HC1383-to-8 Line DecoderThe dec ..
MM74HC138N ,3 to 8 Line DecoderMM74HC138 3-to-8 Line DecoderSeptember 1983Revised February 1999MM74HC1383-to-8 Line DecoderThe dec ..
MM74HC138SJ ,3 to 8 Line DecoderGeneral DescriptionTTL equivalent loads, and are functionally and pin equiva-The MM74HC138 decoder ..
MM74HC138SJX ,3 to 8 Line Decoderfeatureshigh noise immunity and low power consumption usually
MJD41C-MJD41CRL-MJD41CT4-MJD42C-MJD42C1-MJD42CT4
Power 6A 100V NPN
MJD41C (NPN)
MJD42C (PNP)
Preferred Device Complementary Power
Transistors
DPAK For Surface Mount ApplicationsDesigned for general purpose amplifier and low speed switching
applications.
Features Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix) Straight Lead V ersion in Plastic Sleeves (“1” Suffix) Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) Electrically Similar to Popular TIP41 and TIP42 Series Monolithic Construction With Built−in Base − Emitter Resistors Epoxy Meets UL 94, V−0 @ 0.125 in. ESD Ratings: Human Body Model, 3B � 8000 V
Machine Model, C � 400 V
MAXIMUM RATINGSMaximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS*These ratings are applicable when surface mounted on the minimum pad sizes
SILICON
POWER TRANSISTORS
6 AMPERES
100 VOLTS
20 WATTS
DPAK−3
CASE 369D
STYLE 1
DPAK
CASE 369C
STYLE 1
MARKING
DIAGRAMS
Preferred devices are recommended choices for future useand best overall value. = Year = Work Week = 1 or 22
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION3
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