MJD340TF ,NPN Epitaxial Silicon TransistorMJD340MJD340High Voltage Power Transistors D-PAK for Surface Mount
MJD350 ,COMPLEMENTARY SILICON POWER TRANSISTORSELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
MJD350 ,COMPLEMENTARY SILICON POWER TRANSISTORS
MJD350 ,COMPLEMENTARY SILICON POWER TRANSISTORS
MJD350T4 ,SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS 15 WATTSMJD340MJD350®COMPLEMENTARY SILICON POWER TRANSISTORS■ STMicroelectronics PREFERREDSALESTYPES ■ COMP ..
MJD350TF ,PNP Epitaxial Silicon TransistorMJD350MJD350High Voltage Power Transistors D-PAK for Surface Mount
MM74HC132MX_NL ,Quad 2-Input NAND Schmitt TriggerFeaturesThe MM74HC132 utilizes advanced silicon-gate CMOS
MJD340TF
NPN Epitaxial Silicon Transistor
MJD340 MJD340 High Voltage Power Transistors D-PAK for Surface Mount Applications • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 300 V CBO V Collector-Emitter Voltage 300 V CEO V Emitter-Base Voltage 3 V EBO I Collector Current (DC) 0.5 A C I Collector Current (Pulse) 0.75 A CP P Collector Dissipation (T =25°C) 15 W C C Collector Dissipation (T =25°C) 1.56 W a T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) * Collector Emitter Sustaining Voltage I = 1mA, I = 0 300 V CEO C B I Collector Cut-off Current V = 300V, I =0 0.1 mA CEO CB E I Emitter Cut-off Current V = 3V, I = 0 0.1 mA EBO EB C h * DC Current Gain V = 10V, I = 50mA 30 240 FE CE C * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2001 Rev. A2, June 2001
