MJD32CTF ,PNP Epitaxial Silicon TransistorApplications• Load Formed for Surface Mount Application (No Suffix)• Straight Lead (I-PAK, “- I” Su ..
MJD32CTF ,PNP Epitaxial Silicon TransistorMJD32/32CMJD32/32CGeneral Purpose Amplifier Low Speed Switching
MJD32CTF ,PNP Epitaxial Silicon TransistorApplications D-PAK for Surface Mount
MJD32RL ,Complementary Power TransistorsMAXIMUM RATINGS CASE 369CJ3xx21STYLE 1Rating Symbol Max Unit3Collector−Emitter Voltage V VdcCEO40MJ ..
MJD32T4 ,SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTSMaximum ratings are those values beyond which device damage can occur.Preferred devices are recomme ..
MJD340 ,COMPLEMENTARY SILICON POWER TRANSISTORS
MM74HC132M ,Quad 2-Input NAND Schmitt TriggerFeaturesThe MM74HC132 utilizes advanced silicon-gate CMOS
MJD32CTF
PNP Epitaxial Silicon Transistor
MJD32/32C MJD32/32C General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) D-PAK I-PAK 11 • Electrically Similar to Popular TIP32 and TIP32C 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage - 40 V CBO : MJD32 - 100 V : MJD32C V Collector-Emitter Voltage - 40 V CEO : MJD32 - 100 V : MJD32C V Emitter-Base Voltage - 5 V EBO I Collector Current (DC) - 3 A C I Collector Current (Pulse) - 5 A CP I Base Current - 1 A B P Collector Dissipation (T =25°C) 15 W C C Collector Dissipation (T =25°C) 1.56 W a T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) * Collector-Emitter Sustaining Voltage CEO : MJD32 I = - 30mA, I = 0 -40 V C B : MJD32C -100 V I Collector Cut-off Current CEO : MJD32 V = - 40V, I = 0 -50 μA CE B : MJD32C V = - 60V, I = 0 -50 μA CE B I Collector Cut-off Current CES : MJD32 V = - 40V, V = 0 -20 μA CE BE : MJD32C V = - 100V, V = 0 -20 μA CE BE I Emitter Cut-off Current V = - 5V, I = 0 -1 mA EBO BE C h * DC Current Gain V = - 4V, I = - 1A 25 FE CE C V = - 4V, I = - 3A 10 50 CE C V (sat) * Collector-Emitter Saturation Voltage I = - 3, I = - 375mA -1.2 V CE C B V (on) * Base-Emitter ON Voltage V = - 4A, I = - 3A -1.8 V BE CE C f Current Gain Bandwidth Product V = -10V, I = - 500mA 3 MHz T CE C * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2001 Rev. A2, June 2001
