MJD32CT4-A ,Low voltage PNP power transistorFeatures■ This device is qualified for automotive TABapplication■ Surface-mounting TO-252 power pac ..
MJD32CTF ,PNP Epitaxial Silicon TransistorApplications• Load Formed for Surface Mount Application (No Suffix)• Straight Lead (I-PAK, “- I” Su ..
MJD32CTF ,PNP Epitaxial Silicon TransistorMJD32/32CMJD32/32CGeneral Purpose Amplifier Low Speed Switching
MJD32CTF ,PNP Epitaxial Silicon TransistorApplications D-PAK for Surface Mount
MJD32RL ,Complementary Power TransistorsMAXIMUM RATINGS CASE 369CJ3xx21STYLE 1Rating Symbol Max Unit3Collector−Emitter Voltage V VdcCEO40MJ ..
MJD32T4 ,SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTSMaximum ratings are those values beyond which device damage can occur.Preferred devices are recomme ..
MM74HC126SJX ,3-STATE Quad BuffersMM74HC125/MM74HC126 3-STATE Quad BuffersSeptember 1983Revised January 2005MM74HC125/MM74HC1263-STAT ..
MM74HC132M ,Quad 2-Input NAND Schmitt TriggerFeaturesThe MM74HC132 utilizes advanced silicon-gate CMOS
MJD32CT4-A
Low voltage PNP power transistor
June 2012 Doc ID 13576 Rev 4 1/13
MJD32CT4-ALow voltage PNP power transistor
Datasheet − production data
Features This device is qualified for automotive
application Surface-mounting TO-252 power package in
tape and reel Complementary to the NPN type MJD31C
Application General purpose linear and switching
equipment
DescriptionThe device is manufactured in planar technology
with “base island” layout. The resulting transistor
shows exceptional high gain performance
coupled with very low saturation voltage.
Figure 1. Internal schematic diagram
Table 1. Device summary
Electrical ratings MJD32CT4-A2/13 Doc ID 13576 Rev 4
1 Electrical ratings
Table 2. Absolute maximum ratings
Table 3. Thermal data When mounted on FR-4 board of 1 inch², 2 oz Cu.
MJD32CT4-A Electrical characteristicsDoc ID 13576 Rev 4 3/13
2 Electrical characteristicsTcase = 25 °C unless otherwise specified.
2.1 Electrical characteristic (curves)
Table 4. Electrical characteristics Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %
Figure 2. Safe operating area Figure 3. Derating curve
Electrical characteristics MJD32CT4-A
Figure 4. DC current gain (VCE = - 2 V) Figure 5. DC current gain (VCE = - 4 V)
Figure 6. Collector-emitter saturation
voltage
Figure 7. Base-emitter saturation
voltage
Figure 8. Base-emitter on voltage Figure 9. Resistive load switching time
(on)
MJD32CT4-A Electrical characteristicsDoc ID 13576 Rev 4 5/13
2.2 Test circuits
Figure 11. Resistive load switching test circuit Fast electronic switch Non-inductive resistor
Figure 10. Resistive load switching time
(off) Electrical characteristics MJD32CT4-A6/13 Doc ID 13576 Rev 4
Figure 12. Inductive load switching test circuit Fast electronic switch Non-inductive resistor Fast recovery rectifier
MJD32CT4-A Package mechanical dataDoc ID 13576 Rev 4 7/13
Package mechanical dataIn order to meet environmental requirements, ST offers these devices in different grades of
ECOP ACK® packages, depending on their level of environmental compliance. ECOP ACK®
specifications, grade definitions and product status are available at: .
ECOP ACK® is an ST trademark.