MJD31CTF ,NPN Epitaxial Silicon TransistorMJD31/31CMJD31/31CGeneral Purpose Amplifier Low Speed Switching
MJD31CTF ,NPN Epitaxial Silicon TransistorApplications • Load Formed for Surface Mount Application (No Suffix)• Straight Lead (I-PAK, “- I” S ..
MJD31T4 ,SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTS2MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)TYPICAL CHARACTERISTICSVCC+30 VT TA C2.5 25RC25 s2 20+11 ..
MJD31T4G , Complementary Power Transistors
MJD32 ,Complementary Power TransistorsELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
MJD32C ,DiscreteTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction−to−Case R 8.3 °C/ ..
MM74HC125N ,3-STATE Quad BuffersMM74HC125/MM74HC126 3-STATE Quad BuffersSeptember 1983Revised January 2005MM74HC125/MM74HC1263-STAT ..
MM74HC125SJX ,3-STATE Quad BuffersFeaturesThe MM74HC125 and MM74HC126 are general purpose
MJD31CITU-MJD31C-ITU-MJD31CTF
NPN Epitaxial Silicon Transistor
MJD31/31C MJD31/31C General Purpose Amplifier Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP31 and TIP31C D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage CBO : MJD31 40 V : MJD31C 100 V V Collector-Emitter Voltage CEO : MJDH31 40 V : MJD31C 100 V V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 3 A C I Collector Current (Pulse) 1 A CP I Base Current 1 A B P Collector Dissipation (T =25°C) 15 W C C Collector Dissipation (T =25°C) 1.56 W a T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) * Collector-Emitter Sustaining Voltage CEO : MJD31 I = 30mA, I = 0 40 V C B : MJD31C 100 V I Collector Cut-off Current CEO : MJD31 V = 40V, I = 0 50 μA CE B : MJD31C V = 60V, I = 0 50 μA CE B I Collector Cut-off Current CES : MJD31 V = 40V, V = 0 20 μA CE BE : MJD31C V = 100V, V = 0 20 μA CE BE I Emitter Cut-off Current V = 5V, I = 0 1 mA EBO BE C h * DC Current Gain V = 4V, I = 1A 25 FE CE C V = 4V, I = 3A 10 50 CE C V (sat) * Collector-Emitter Saturation Voltage I = 3A, I = 375mA 1.2 V CE C B V (on) * Base-Emitter ON Voltage V = 4A, I = 3A 1.8 V BE CE C f Current Gain Bandwidth Product V = 10V, I = 500mA 3 MHz T CE C * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2001 Rev. A2, June 2001
