MJD29C ,NPN Epitaxial Silicon TransistorApplications • Load Formed for Surface Mount Application (No Suffix)• Straight Lead (I-PAK, “- I” S ..
MJD30 ,PNP Epitaxial Silicon TransistorApplications• Load Formed for Surface Mount Application (No Suffix)• Straight Lead (I-PAK, “- I” Su ..
MJD3055 ,COMPLEMENTARY SILICON POWER TRANSISTORSELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
MJD3055 ,COMPLEMENTARY SILICON POWER TRANSISTORS
MJD3055T4 ,Power 10A 60V Discrete NPN2MJD2955 (PNP) MJD3055 (NPN)TYPICAL CHARACTERISTICST TA C2.5 252 20TC1.5 15T A1 10SURFACE MOUNT0.5 ..
MJD31 ,SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTSMAXIMUM RATINGS CASE 369CJ3xx21STYLE 1Rating Symbol Max Unit3Collector−Emitter Voltage V VdcCEO40MJ ..
MM74HC123AMX ,Dual Retriggerable Monostable MultivibratorFeaturesThe MM74HC123A high speed monostable multivibrators
MJD29C
NPN Epitaxial Silicon Transistor
MJD29/29C MJD29/29C General Purpose Amplifier Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP29 and TIP29C D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage CBO : MJD29 40 V : MJD29C 100 V V Collector-Emitter Voltage CEO : MJD29 40 V : MJD29C 100 V V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 1 A C I Collector Current (Pulse) 3 A CP I Base Current 0.4 A B P Collector Dissipation (T =25°C) 15 W C C Collector Dissipation (T =25°C) 1.56 W a T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) *Collector-Emitter Sustaining Voltage CEO : MJD29 I = 30mA, I = 0 40 V C B : MJD29C 100 V I Collector Cut-off Current CEO : MJD29 V = 40V, I = 0 50 μA CE B : MJD29C V = 60V, I = 0 50 μA CE B I Collector Cut-off Current CES : MJD29 V = 40V, V = 0 20 μA CE BE : MJD29C V = 100V, V = 0 20 μA CE BE I Emitter Cut-off Current V = 5V, I = 0 1 mA EBO BE C h *DC Current Gain V = 4V, I = 0.2A 40 FE CE C V = 4V, I = 1A 15 75 CE C V (sat) *Collector-Emitter Saturation Voltage I = 1A, I = 125mA 0.7 V CE C B V (on) *Base-Emitter ON Voltage V = 4A, I = 1A 1.3 V BE CE C f Current Gain Bandwidth Product V = 10V, I = 200mA 3 MHz T CE C * Pulse Test: PW ≤ 300μs, Duty Cycle ≤ 2% ©2001 Rev. A2, June 2001
