MJD210TF ,PNP Epitaxial Silicon TransistorApplications (No Suffix)• Straight Lead (I-PAK, “ - I “ Suffix)D-PAK I-PAK111.Base 2.Collector ..
MJD210TF ,PNP Epitaxial Silicon TransistorMJD210MJD210D-PAK for Surface Mount
MJD210-TF ,PNP Epitaxial Silicon TransistorApplications• High DC Current Gain• Low Collector Emitter Saturation Voltage• Lead Formed for Surfa ..
MJD210-TF ,PNP Epitaxial Silicon TransistorApplications (No Suffix)• Straight Lead (I-PAK, “ - I “ Suffix)D-PAK I-PAK111.Base 2.Collector ..
MJD243 ,NPN SILICON POWER TRANSISTOR 4 AMPERES 100 VOLTS 12.5 WATTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
MJD243T4 ,NPN SILICON POWER TRANSISTOR 4 AMPERES 100 VOLTS 12.5 WATTS3MJD243 (NPN), MJD253 (PNP)10500s5100s2 1ms15ms dc0.50.2BONDING WIRE LIMITEDTHERMALLY LIMITED ..
MM74HC08SJX , Quad 2-Input AND Gate
MM74HC107N , MM54HC107/MM74HC107 Dual J-K Flip-Flops with Clear
MM74HC11N ,Triple 3-Input AND GateMM54HC11/MM74HC11Triple3-InputANDGateJanuary1988MM54HC11/MM74HC11Triple3-InputANDGateGeneralDescrip ..
MM74HC123AJ ,Dual Retriggerable Monostable Multivibratorfeatures both a negative, A, and a posi-
MM74HC123AJ ,Dual Retriggerable Monostable MultivibratorMM54HC123A/MM74HC123ADualRetriggerableMonostableMultivibratorJanuary1988MM54HC123A/MM74HC123ADualRe ..
MM74HC123AM ,Dual Retriggerable Monostable MultivibratorMM74HC123A Dual Retriggerable Monostable MultivibratorSeptember 1983Revised May 2001MM74HC123ADual ..
MJD210TF-MJD210-TF
PNP Epitaxial Silicon Transistor
MJD210 MJD210 D-PAK for Surface Mount Applications • High DC Current Gain • Low Collector Emitter Saturation Voltage • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ - I “ Suffix) D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage - 40 V CBO V Collector-Emitter Voltage - 25 V CEO V Emitter-Base Voltage - 8 V EBO I Collector Current (DC) - 5 A C I Collector Peck Current (Pulse) - 10 A CP I Base Current - 1 A B P Collector Dissipation (T = 25°C) 12.5 W C C Collector Dissipation (T = 25°C) 1.4 W a T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) * Collector-Emitter Sustaining Voltage I = - 10mA, I = 0 -25 V CEO C B I Collector Cut-off Current V = - 40V, I = 0 -100 nA CBO CB E I Emitter Cut-off Current V = - 8V, I = 0 -100 nA EBO EBO C h * DC Current Gain V = - 1V, I = - 500mA 70 FE CE C V = - 1V, I = - 2A 45 180 CE C V = - 2V, I = - 5A 10 CE C V (sat) * Collector-Emitter Saturation Voltage I = - 500mA, I = - 50mA -0.3 V CE C B I = - 2A, I = - 200mA -0.75 V C B I = - 5A, I = - 1A -1.8 V C B V (sat) * Base-Emitter Saturation Voltage I = - 5A, I = - 1A -2.5 V BE C B V (on) * Base-Emitter ON Voltage V = - 1V, I = - 2A -1.6 V BE CE C f Current Gain Bandwidth Product V = - 10V, I = - 100mA 65 MHz T CE C C Output Capacitance V = - 10V, I = 0, f = 0.1MHz 120 pF ob CB E * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2001 Rev. A2, June 2001
