MJD18002D2 ,Bipolar NPN TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CÎÎÎCharacteristic Symbol Min Typ Max U ..
MJD200 ,Complementary Plastic Power Transistors NPNMaximum ratings applied to the device are individual stress limitvalues (not normal operating condi ..
MJD200RL ,Complementary Plastic Power Transistors NPNELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
MJD200RLG , Complementary Plastic Power Transistors
MJD200T4 ,SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS2MJD200 (NPN) MJD210 (PNP)T TA C2.5 25VCC+30 V2 20 25 sR+11 VC0 SCOPER1.5 15B−9 VDT (SURFACE MOU ..
MJD200T4 ,SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS
MM74HC08MTC ,Quad 2-Input AND GateElectrical Characteristics (Note 4)T = 25°CT = −40 to 85°CT = −40 to 125°CA A A VSymbol Parameter ..
MM74HC08MTCX ,Quad 2-Input AND GateElectrical Characteristics V = 5V, T = 25°C, C = 15 pF, t = t = 6 nsCC A L r f GuaranteedSymbol Par ..
MM74HC08MTCX ,Quad 2-Input AND GateElectrical Characteristics V = 5V, T = 25°C, C = 15 pF, t = t = 6 nsCC A L r f GuaranteedSymbol Par ..
MM74HC08MX ,Quad 2-Input AND GateMM74HC08 Quad 2-Input AND GateSeptember 1983Revised January 2005MM74HC08Quad 2-Input AND Gate
MM74HC08N ,Quad 2-Input AND GateMM74HC08 Quad 2-Input AND GateSeptember 1983Revised January 2005MM74HC08Quad 2-Input AND Gate
MM74HC08SJX , Quad 2-Input AND Gate
MJD18002D2
Bipolar NPN Transistor
MJD18002D2
Bipolar NPN T ransistor
High Speed, High Gain Bipolar NPN
Power Transistor with Integrated
Collector–Emitter Diode and Built–In
Efficient Antisaturation NetworkThe MJD18002D2 is a state–of–the–art high speed, high gain
bipolar transistor (H2BIP). Tight dynamic characteristics and lot to lot
minimum spread (±150 ns on storage time) make it ideally suitable for
light ballast applications. Therefore, there is no longer a need to
guarantee an hFE window.
Main Features: Low Base Drive Requirement High Peak DC Current Gain (55 Typical) @ IC = 100 mA
Extremely Low Storage Time Min/Max Guarantees Due to the
H2BIP Structure which Minimizes the Spread Integrated Collector–Emitter Free Wheeling Diode Fully Characterized and Guaranteed Dynamic VCEsat Characteristics Make It Suitable for PFC Application “6 Sigma” Process Providing Tight and Reproductible Parameter
Spreads
Two Versions: MJD18002D2–1: Case 369 for Insertion Mode MJD18002D2: Case 369A for Surface Mount Mode
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
