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Partno	Mfg	Dc	Qty	Available	Descript
MJD127T4	ST	N/a	7500	avai	COMPLEMENTARY POWER DARLINGTON TRANSISTORS

MJD127T4 ,COMPLEMENTARY POWER DARLINGTON TRANSISTORSMJD122-1 / MJD122T4MJD127-1 / MJD127T4COMPLEMENTARY POWERDARLINGTON TRANSISTORSOrdering Marking Pac ..
MJD148 ,NPN Silicon Power Transistor3V , COLLECTOR−EMITTER VOLTAGE (V) h , DC CURRENT GAIN (NORMALIZED)CE FEMJD1482 +2.5*APPLIES FOR I ..
MJD148T4 ,NPN Silicon Power TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CÎCharacteristic Test Conditions Symbol ..
MJD18002D2 ,Bipolar NPN TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CÎÎÎCharacteristic Symbol Min Typ Max U ..
MJD200 ,Complementary Plastic Power Transistors NPNMaximum ratings applied to the device are individual stress limitvalues (not normal operating condi ..
MJD200RL ,Complementary Plastic Power Transistors NPNELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
MM74HC04SJ ,Hex InverterMM74HC04 Hex InverterSeptember 1983Revised January 2005MM74HC04Hex Inverter
MM74HC04SJX ,Hex InverterMM74HC04 Hex InverterSeptember 1983Revised January 2005MM74HC04Hex Inverter
MM74HC08 ,Quad 2-Input AND Gate
MM74HC08M ,Quad 2-Input AND GateMM74HC08 Quad 2-Input AND GateSeptember 1983Revised January 2005MM74HC08Quad 2-Input AND Gate
MM74HC08MTC ,Quad 2-Input AND GateElectrical Characteristics (Note 4)T = 25°CT = −40 to 85°CT = −40 to 125°CA A A VSymbol Parameter ..
MM74HC08MTCX ,Quad 2-Input AND GateElectrical Characteristics V = 5V, T = 25°C, C = 15 pF, t = t = 6 nsCC A L r f GuaranteedSymbol Par ..

MJD127T4
COMPLEMENTARY POWER DARLINGTON TRANSISTORS
1/8August 2002
MJD122-1 / MJD122T4
MJD127-1 / MJD127T4
COMPLEMENTARY POWER
DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE THROUGH HOLE TO-251 (IPAK)
POWER PACKAGE IN TUBE (SUFFIX “-1”) SURFACE MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4”) ELECTRICALLY SIMILAR TO TIP122 AND
TIP127
APPLICATIONS: GENERAL PURPOSE SWITCHING AND
AMPLIFIER
DESCRIPTION
The MJD122 and MJD127 form complementary
NPN - PNP pair. They are manufactured using
Epitaxial Base technology for cost-effective
performance.
ABSOLUTE MAXIMUM RATINGS
For PNP types voltage and current values are negative.
MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tj = 25 °C unless otherwise specified)
* Pulsed: Pulse duration = 300 μs, duty cycle ≤ 2 %.
For PNP types voltage and current values are negative.
3/8
MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4
Base-Emitter Saturation Voltage (PNP type)Base-Emitter Saturation Voltage (NPN type)
Collector-Emitter Saturation Voltage (PNP type)Collector-Emitter Saturation Voltage (NPN type)
Safe Operating Area Derating Curve
MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4
Switching Times Resistive Load (NPN type) Switching Times Resistive Load (PNP type)
DC Current Gain (PNP type)
Base-Emitter On Voltage (NPN type)
DC Current Gain (NPN type)
Base-Emitter On Voltage (PNP type)
5/8
MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4
Freewheel Diode Forward Voltage (NPN type) Freewheel Diode Forward Voltage (PNP type)
MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4

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