MJD122 ,PNP Silicon Darlington TransistorABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitNPN MJD122PNP MJD127V Collector-Base Voltage (I ..
MJD122 ,PNP Silicon Darlington TransistorELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
MJD122 ,PNP Silicon Darlington TransistorMJD122-1 / MJD122T4MJD127-1 / MJD127T4COMPLEMENTARY POWERDARLINGTON TRANSISTORSOrdering Marking Pac ..
MJD127 ,PNP Silicon Darlington Transistor3I μ, COLLECTOR CURRENT ( A) V, VOLTAGE (VOLTS) h , DC CURRENT GAINCFEh , SMALL−SIGNAL CURRENT GAIN ..
MJD127 ,PNP Silicon Darlington Transistor
MJD127 ,PNP Silicon Darlington Transistor
MM74HC04MX_NL ,Hex InverterElectrical Characteristics (Note 4)T = 25°CT = −40 to 85°CT = −55 to 125°CA A A Symbol Parameter C ..
MM74HC04N ,Hex InverterMM74HC04 Hex InverterSeptember 1983Revised January 2005MM74HC04Hex Inverter
MM74HC04SJ ,Hex InverterMM74HC04 Hex InverterSeptember 1983Revised January 2005MM74HC04Hex Inverter
MM74HC04SJX ,Hex InverterMM74HC04 Hex InverterSeptember 1983Revised January 2005MM74HC04Hex Inverter
MM74HC08 ,Quad 2-Input AND Gate
MM74HC08M ,Quad 2-Input AND GateMM74HC08 Quad 2-Input AND GateSeptember 1983Revised January 2005MM74HC08Quad 2-Input AND Gate
MJD122
Power 8A 100V NPN
MJD122 (NPN)
MJD127 (PNP)
Preferred Device Complementary Darlington
Power Transistor
DPAK For Surface Mount ApplicationsDesigned for general purpose amplifier and low speed switching
applications.
Features Pb−Free Packages are Available Lead Formed for Surface Mount Applications in Plastic Sleeves Available in 16 mm Tape and Reel (“T4” Suffix) Surface Mount Replacements for 2N6040−2N6045 Series,
TIP120−TIP122 Series, and TIP125−TIP127 Series Monolithic Construction With Built−in Base−Emitter Shunt Resistors High DC Current Gain −
hFE = 2500 (Typ) @ IC = 4.0 Adc Epoxy Meets UL 94, V−0 @ 0.125 in. ESD Ratings: Human Body Model, 3B � 8000 V
Machine Model, C � 400 V
MAXIMUM RATINGSMaximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
