MJD112TF ,NPN Silicon Darlington TransistorMJD112MJD112D-PAK for Surface Mount
MJD112TF ,NPN Silicon Darlington TransistorApplications• High DC Current Gain• Built-in a Damper Diode at E-C• Lead Formed for Surface Mount
MJD112TF ,NPN Silicon Darlington TransistorApplications (No Suffix)• Straight Lead (I-PAK, “ - I “ Suffix)D-PAK I-PAK11• Electrically Similar ..
MJD117 ,PNP Silicon Darlington TransistorELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
MJD117T4 ,Power 2A 100V Darlington PNPTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction−to−Case R 6.25 °C ..
MJD117T4G , Complementary Darlington Power Transistors
MM74HC04M ,Hex InverterMM74HC04 Hex InverterSeptember 1983Revised January 2005MM74HC04Hex Inverter
MM74HC04MTCX ,Hex InverterElectrical Characteristics (Note 4)T = 25°CT = −40 to 85°CT = −55 to 125°CA A A Symbol Parameter C ..
MM74HC04MTCX ,Hex InverterFeaturesThe MM74HC04 inverters utilize advanced silicon-gate
MJD112TF
NPN Silicon Darlington Transistor
MJD112 MJD112 D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ - I “ Suffix) D-PAK I-PAK 11 • Electrically Similar to Popular TIP112 1.Base 2.Collector 3.Emitter NPN Silicon Darlington Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Equivalent Circuit C Symbol Parameter Value Units V Collector-Base Voltage 100 V CBO V Collector-Emitter Voltage 100 V CEO B V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 2 A C I Collector Current (Pulse) 4 A CP I Base Current 50 mA B R1 R2 P Collector Dissipation (T =25°C) 20 W C C E Collector Dissipation (T =25°C) 1.75 W R11 ≅ 0kΩ a R20 ≅ .6kΩ T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) Collector-Emitter Sustaining Voltage I = 30mA, I = 0 100 V CEO C B I Collector Cut-off Current V = 50V, I = 0 20 μA CEO CE B I Collector Cut-off Current V = 100V, I = 0 20 μA CBO CB B I Emitter Cut-off Current V = 5V, I = 0 2 mA EBO EB C h * DC Current Gain V = 3V, I = 0.5A 500 FE CE C V = 3V, I = 2A 1000 12K CE C V = 3V, I = 4A 200 CE C V (sat) * Collector-Emitter Saturation Voltage I = 2A, I = 8mA 2 V CE C B I = 4A, I = 40mA 3 V C B V (sat) * Base-Emitter Saturation Voltage I = 4A, I = 40mA 4 V BE C B V (on) * Base-Emitter ON Voltage V = 3A, I = 2A 2.8 V BE CE C f Current Gain Bandwidth Product V = 10V, I = 0.75A 25 MHz T CE C C Output Capacitance V = 10V, I = 0 100 pF ob CB E f = 0.1MHz * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2001 Rev. A2, June 2001
