MJD112T4 ,COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORSMJD112MJD117®COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS■ STMicroelectronics PREFERREDSALEST ..
MJD112T4 ,COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORSMJD112MJD117®COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS■ STMicroelectronics PREFERREDSALEST ..
MJD112T4 ,COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORSMAXIMUM RATINGS3Rating Symbol Max UnitCollector−Emitter Voltage V 100 VdcCEO4Collector−Base Voltage ..
MJD112T4G , Complementary Darlington Power Transistors
MJD112TF ,NPN Silicon Darlington TransistorMJD112MJD112D-PAK for Surface Mount
MJD112TF ,NPN Silicon Darlington TransistorApplications• High DC Current Gain• Built-in a Damper Diode at E-C• Lead Formed for Surface Mount
MM74HC02N ,Quad 2-Input NOR GateMM74HC02 Quad 2-Input NOR GateSeptember 1983Revised January 2005MM74HC02Quad 2-Input NOR Gate
MM74HC04M ,Hex InverterMM74HC04 Hex InverterSeptember 1983Revised January 2005MM74HC04Hex Inverter
MM74HC04MTCX ,Hex InverterElectrical Characteristics (Note 4)T = 25°CT = −40 to 85°CT = −55 to 125°CA A A Symbol Parameter C ..
MM74HC04MTCX ,Hex InverterFeaturesThe MM74HC04 inverters utilize advanced silicon-gate
MJD112T4
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
MJD112
MJD117COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS STMicroelectronics PREFERRED
SALESTYPES LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4") ELECTRICAL SIMILAR TO TIP112 AND
TIP117
APPLICATIONS GENERAL PURPOSE SWITCHING AND
AMPLIFIER
DESCRIPTION The MJD112 and MJD117 form complementary
PNP - NPN pairs.
They are manufactured using Epitaxial Base
technology for cost-effective performance.
January 2003
ABSOLUTE MAXIMUM RATINGSFor PNP type voltage and current values are negative.
1/6
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300 μs, duty cycle ≤ 2 %
For PNP types voltage and current values are negative.
Safe Operating Areas Derating Curve
MJD112/MJD1172/6
DC Current Gain (NPN type)
Collector-Emitter Saturation Voltage (NPN type)
Base-Emitter Saturation Voltage (NPN type)
DC Current Gain (NPN type)
Collector-Emitter Saturation Voltage (PNP type)
Base-Emitter Saturation Voltage (PNP type)
MJD112/MJD1173/6
Base-Emitter On Voltage (NPN type) Base-Emitter On Voltage (PNP type)
Freewheel Diode Forward Voltage (NPN types) Freewheel Diode Forward Voltage (PNP types)
MJD112/MJD1174/6
MJD112/MJD1175/6
. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2002 STMicroelectronics – Printed in Italy – All Rights Reserved
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MJD112/MJD1176/6
