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Partno	Mfg	Dc	Qty	Available	Descript
MJ3001	MOT	N/a	10	avai	80V silicon epitaxial-base darlington

MJ3001 ,80V silicon epitaxial-base darlingtonMAXIMUM RATINGS *Motorola Preferred DeviceÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ..
MJ4502 ,Leaded Power Transistor General PurposeABSOLUTE MAXIMUM RATINGS Symbol Parameter Unit Collector-emitter Voltage (Its Td.'.' O) n V Vc ..
MJ8503 , Silicon NPN Power Transistor
MJB41C ,Complementary Silicon Plastic Power Transistors2P , POWER DISSIPATION (WATTS)Dt, TIME μ (s)MJB41C (NPN), MJB42C (PNP)1.00.7D = 0.50.50.3 0.20.2 ..
MJB42C ,Complementary Silicon Plastic Power Transistors3t, TIME μ (s)I , COLLECTOR CURRENT (AMP)Cr(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)C, CAPAC ..
MJB42CT4 ,Complementary Silicon Plastic Power TransistorsELECTRICAL CHARACTERISTICS (T = 25
C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
MM74HC , Synchronous Decade Counter with Asynchronous Clear
MM74HC , Synchronous Decade Counter with Asynchronous Clear
MM74HC , Synchronous Decade Counter with Asynchronous Clear
MM74HC , Synchronous Decade Counter with Asynchronous Clear
MM74HC , Synchronous Decade Counter with Asynchronous Clear
MM74HC00 ,Quad 2-Input NAND Gate

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MJ3001
10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS
$%! #!&!""#!".. for use as output devices in complementary general purpose amplifier applica-
tions. High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc Monolithic Construction with Built–in Base–Emitter Shunt Resistors
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Figure 1. Darlington Circuit Schematic
NPN
MJ3000
MJ3001
BASE
COLLECTOR
EMITTER
PNP
MJ2500
MJ2501
BASE
COLLECTOR
EMITTER
*Motorola Preferred Device

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