MJ21193 ,16 ampere complementary silicon power transistors 250 volts 250 watts3h hI , COLLECTOR CURRENT (A) , DC CURRENT GAIN , DC CURRENT GAINC FE FEI , COLLECTOR CURRENT (A) h ..
MJ2841 , Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
MJ2841 , Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
MJ3001 ,80V silicon epitaxial-base darlingtonMAXIMUM RATINGS *Motorola Preferred DeviceÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ..
MJ4502 ,Leaded Power Transistor General PurposeABSOLUTE MAXIMUM RATINGS
Symbol Parameter Unit
Collector-emitter Voltage (Its Td.'.' O) n V
Vc ..
MJ8503 , Silicon NPN Power Transistor
MM74C93N ,4-Bit Binary CounterElectrical Characteristics” providesconditions for actual device operation.(Soldering, 10 seconds) ..
MM74C93N ,4-Bit Binary CounterFeaturesThe MM74C93 binary counter and complementary MOS
MJ21193
16 ampere complementary silicon power transistors 250 volts 250 watts
Silicon Power T ransistors
The MJ21193 and MJ21194 utilize Perforated Emitter technology
and are specifically designed for high power audio output, disk head
positioners and linear applications. Total Harmonic Distortion Characterized High DC Current Gain –
hFE = 25 Min @ IC = 8 Adc Excellent Gain Linearity High SOA: 2.5 A, 80 V, 1 Second
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
OFF CHARACTERISTICS(1) Pulse Test: Pulse Width = 5 μs, Duty Cycle ≤10%. (continued)
*ON Semiconductor Preferred Device
