MJ15019 ,4.0 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 200 AND 250 VOLTS 150 WATTSTHERMAL CHARACTERISTICSÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎC ..
MJ15019 ,4.0 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 200 AND 250 VOLTS 150 WATTSOrder this document**by MJ15018/DSEMICONDUCTOR TECHNICAL DATA ** ** * *!**$*"& ** * * %*"* *"**#*# ..
MJ15021 ,Complementary Silicon Power TransistorsELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
MJ15024 ,Silicon N-P-N epitaxial-base high power transistor.ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
MJ15024G , Silicon Power Transistors
MJ15025 ,POWER TRANSISTOR(16A,200-250V,250W)ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
MM74C922N ,16-Key EncoderFeaturesThe MM74C922 and MM74C923 CMOS key encoders pro-
MJ15018-MJ15019
4.0 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 200 AND 250 VOLTS 150 WATTS
- !$"& %"
"##$ "#.. designed for use as high frequency drivers in Audio Amplifiers. High Gain Complementary Silicon Power Transistors Safe Operating Area 100% Tested
50 V, 3.0 A, 1.0 Sec. Excellent Frequency Response — fT = 20 MHz min.
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TC, CASE TEMPERATURE (°C) 25 75
POWER DERA
TING F
ACT
OR (%)
175 200 100 150
Figure 1. Power Derating
*Motorola Preferred Device