MJ14003 ,60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTSELECTRICAL CHARACTERISTICS (T = 25* C unless otherwise noted)CÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ..
MJ1440 , 2 MBIT PCM SIGNALLING CIRCUIT HDB3 ENCODER/DECODER
MJ1440 , 2 MBIT PCM SIGNALLING CIRCUIT HDB3 ENCODER/DECODER
MJ15001 ,Silicon N-P-N power transistor. 140V, 200W.ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
MJ15001 ,Silicon N-P-N power transistor. 140V, 200W.Order this document**by MJ15001/DSEMICONDUCTOR TECHNICAL DATA** * **The MJ15001 and MJ15002 are Epi ..
MJ15001G , Complementary Silicon Power Transistors
MM74C905N ,3 V to 15 V, 12-bit successive approximation registerMM74C905 12-Bit Successive Approximation RegisterOctober 1987Revised July 2003MM74C90512-Bit Succes ..
MM74C906M ,Hex Open Drain N-Channel BuffersMM74C906 Hex Open Drain N-Channel BuffersOctober 1987Revised January 2004MM74C906Hex Open Drain N-C ..
MM74C906N ,Hex Open Drain N-Channel BuffersFeaturesThe MM74C906 buffer employs monolithic CMOS technol-
MJ14003
60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS
# " " %$ !!" !.. designed for use in high–power amplifier and switching circuit applications, High Current Capability — IC Continuous = 60 Amperes DC Current Gain — hFE = 15–100 @ IC = 50 Adc Low Collector–Emitter Saturation Voltage —
VCE(sat) = 2.5 Vdc (Max) @ IC = 50 Adc
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Figure 1. Power Derating
TC, CASE TEMPERATURE (°C) 80 120 240
, POWER DISSIP
TION (W
TTS)
210 160 2000
Preferred devices are Motorola recommended choices for future use and best overall value.
*Motorola Preferred Device
